Nexperia Launches Industry-Leading 1200V SiC MOSFET

Introduction: Nexperia (Nexperia Semiconductors) recently announced that the company has launched an industry-leading 1200V Silicon Carbide (SiC) MOSFET, available in D2PAK-7 surface-mount device (SMD) packaging, with options for 30, 40, 60, and 80 mΩ RDson values.

Nexperia SiC MOSFET

This follows Nexperia’s release of two SiC MOSFET discrete devices in TO-247 packaging with 3 and 4 pins at the end of 2023, rapidly expanding its SiC MOSFET product portfolio to include devices with flexible packaging and RDson values of 17, 30, 40, 60, and 80 mΩ.

With the launch of the NSF0xx120D7A0, Nexperia is meeting the growing market demand for high-performance SiC switches in SMD packaging such as D2PAK-7, which are becoming increasingly popular in various industrial applications such as electric vehicle (EV) charging (charging piles), uninterruptible power supplies (UPS), and solar and energy storage system (ESS) inverters. This also further proves the successful strategic partnership between Nexperia and Mitsubishi Electric Corporation (MELCO), where the two companies have jointly pushed the efficiency and electrical performance of SiC wide-bandgap semiconductors to new heights, while also increasing the future production capacity of this technology to meet the growing market demand.

RDson is a key performance parameter of SiC MOSFETs because it affects the power loss during conduction. However, many manufacturers only focus on the nominal value, ignoring the fact that RDson may increase by more than 100% compared to the nominal value at room temperature as the device’s operating temperature rises, resulting in considerable conduction loss. Nexperia found that this is also one of the factors limiting the performance of many SiC devices on the market. The newly launched SiC MOSFET features innovative process technology characteristics, achieving industry-leading RDson temperature stability, with the nominal value of RDson increasing by only 38% in the operating temperature range of 25°C to 175°C.

Strict threshold voltage VGS(th) specifications ensure that these MOSFET discrete devices provide balanced current-carrying performance when paralleled. In addition, the lower forward voltage of the body diode (VSD) helps to improve device robustness and efficiency, while also relaxing the dead time requirements for freewheeling operations.

LCSC is the distributor of Nexperia. LCSC is a global distributor with a broad selection of electronic components, with more than 4 million registered customers worldwide. And, LCSC Electronics offer in-stock inventory for fast delivery since LCSC owns 130,000㎡ intelligent warehouses. 

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