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LGE 2N3906
| Manufacturer | LGEAsian Brands |
| MPN | 2N3906 |
| LCSC Part # | C713606 |
| Packaging | TO-92 |
| Customer # | |
| Key Attributes | TRANS PNP 40V 200mA TO-92 |
| Datasheet |  LGE 2N3906 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | LGE | |
| Packaging | TO-92 | |
| Operating Temperature | - | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 250MHz | |
| Collector - Emitter Voltage VCEO | 40V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 400 | |
| Pd - Power Dissipation | 625mW | |
| Current - Collector(Ic) | 200mA | |
| Number | 1 PNP | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 400mV |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | LGE | |
| Packaging | TO-92 | |
| Operating Temperature | - | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 250MHz | |
| Collector - Emitter Voltage VCEO | 40V |
| Type | Description | |
|---|---|---|
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 400 | |
| Pd - Power Dissipation | 625mW | |
| Current - Collector(Ic) | 200mA | |
| Number | 1 PNP | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 400mV |
Report an ErrorShow similar products (0) >
Features
AI Translation
- PNP silicon epitaxial planar transistor for switching and Amplifier applications
- As complementary type, the NPN transistor 2N3904 is Recommended
- This transistor is also available in the SOT-23 case with the type designation MMBT3906
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Minimum: 20Multiple: 20Sales Unit: Piece
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | LGE | |
| Packaging | TO-92 | |
| Operating Temperature | - | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 250MHz | |
| Collector - Emitter Voltage VCEO | 40V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 400 | |
| Pd - Power Dissipation | 625mW | |
| Current - Collector(Ic) | 200mA | |
| Number | 1 PNP | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 400mV |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | LGE | |
| Packaging | TO-92 | |
| Operating Temperature | - | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 250MHz | |
| Collector - Emitter Voltage VCEO | 40V |
| Type | Description | |
|---|---|---|
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 400 | |
| Pd - Power Dissipation | 625mW | |
| Current - Collector(Ic) | 200mA | |
| Number | 1 PNP | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 400mV |
Report an ErrorShow similar products (0) >
Features
AI Translation
- PNP silicon epitaxial planar transistor for switching and Amplifier applications
- As complementary type, the NPN transistor 2N3904 is Recommended
- This transistor is also available in the SOT-23 case with the type designation MMBT3906
C713606 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Type | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |