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SAMSUNG K4A8G165WC-BCTD product image
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SAMSUNG K4A8G165WC-BCTDRoHS

Manufacturer
SAMSUNG
MPN
K4A8G165WC-BCTD
LCSC Part #
C2803251
Packaging
FBGA-96
Customer #
Key Attributes
8Gb C-die DDR4 SDRAM x16
Datasheetpdf iconSAMSUNG K4A8G165WC-BCTD

Products Specifications

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TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory (ICs)
ManufacturerSAMSUNG
PackagingFBGA-96
Refresh Current-
Memory Size8Gbit
Voltage - Supply1.14V~1.26V
Operating temperature0℃~+95℃
Clock Frequency1.333GHz
FeaturesAuto precharge function;Asynchronous reset function;CRC function;ZQ calibration function;Dynamic on-chip termination;Data mask function
Memory FormatDDR4 SDRAM
Current - Supply-
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging112
Sales UnitPiece

Features

AI Translation
  • JEDEC standard 1.2V (1.14V~1.26V)
  • VDDQ = 1.2V (1.14V~1.26V)
  • VPP = 2.5V (2.375V~2.75V)
  • 800 MHz fCK for 1600Mb/sec/pin, 933 MHz fCK for 1866Mb/sec/pin, 1067MHz fCK for 2133Mb/sec/pin, 1200MHz fCK for 2400Mb/sec/pin, 1333MHz fCK for 2666Mb/sec/pin
  • 8 Banks (2 Bank Groups)
  • Programmable CAS Latency (posted CAS): 10,11,12,13,14,15,16,17,18,19,20
  • Programmable CAS Write Latency (CWL)=9,11 (DDR4-1600), 10,12 (DDR4-1866),11,14 (DDR4-2133),12,16 (DDR4-2400) and 14,18 (DDR4- 2666)
  • 8-bit pre-fetch
  • Burst Length: 8, 4 with fCCD = 4 which does not allow seamless read or write [either On the fly using A12 or MRS]
  • Bi-directional Differential Data-Strobe
  • Internal (self) calibration: Internal self calibration through ZQ pin (RZ0:240 ohm ±1%)
  • On Die Termination using ODT pin
  • Average Refresh Period 7.8us at lower than TCASE 85℃, 3.9us at 85℃ < TCASE
In-Stock: 681
681 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 41.1293$ 41.13
30+$ 38.9789$ 1169.37
Standard Packaging112/Full Tray
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