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onsemi TIP102GRoHS

Manufacturer
onsemi
MPN
TIP102G
LCSC Part #
C233759
Packaging
TO-220
Customer #
Key Attributes
Complementary Silicon Transistors, Plastic, Medium-Power
Datasheetpdf icononsemi TIP102G
In-Stock: 4
4 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 1.6289$ 1.63
10+$ 1.3826$ 13.83
50+$ 1.2281$ 61.41
100+$ 1.0704$ 107.04
500+$ 0.9996$ 499.80
1,000+$ 0.969$ 969.00
Standard Packaging50/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors
Manufactureronsemi
PackagingTO-220
Current - Collector Cutoff50uA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO100V
DC Current Gain1000
Pd - Power Dissipation2W
typeNPN
Current - Collector(Ic)8A
Vce Saturation(VCE(sat))2.5V
Operating Temperature-65℃~+150℃@(Tj)
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

Designed for general−purpose amplifier and low−speed switching applications.

Features

AI Translation
  • High DC Current Gain - h_FE = 2500 (Typ) @ I_C = 4.0 Adc
  • Collector−Emitter Sustaining Voltage - @ 30 mAdc: V_CEO(sus) = 60 Vdc (Min) - TIP100; = 80 Vdc (Min) - TIP101; = 100 Vdc (Min) - TIP102, TIP105, TIP106, TIP107
  • Low Collector−Emitter Saturation Voltage - V_CE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc; = 2.5 Vdc (Max) @ IC = 8.0 Adc
  • Monolithic Construction with Built−in Base−Emitter Shunt Resistors
  • These Devices are Pb−Free and are RoHS Compliant