LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
Cart
ST MJD122T4 product image
  • MJD122T4 thumbnail 1
  • MJD122T4 thumbnail 2
  • MJD122T4 thumbnail 3
  • Pinout Diagram
  • Footprint Diagram
Images for reference only

ST MJD122T4RoHS

Manufacturer
ST
MPN
MJD122T4
LCSC Part #
C138774
Packaging
TO-252-2(DPAK)
Customer #
Key Attributes
100V 1000 NPN 8A TO-252-2(DPAK) Single Bipolar Transistors RoHS
Datasheetpdf iconST MJD122T4
In-Stock: 2,600
2,600 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.4701$ 2.35
50+$ 0.3805$ 19.03
150+$ 0.3421$ 51.32
500+$ 0.2942$ 147.10
2,500+$ 0.2729$ 682.25
5,000+$ 0.2601$ 1300.50
Standard Packaging2500/Full Reel
Better price for more quantity?
$

Products Specifications

Show similar products (0) >
TypeDescription
CategoryDiscrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors
ManufacturerST
PackagingTO-252-2(DPAK)
Vbe Saturation(VBE(sat))4.5V
Current - Collector Cutoff10uA
Vbe On(VBE(on))2.8V
Transition frequency(fT)-
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO5V
DC Current Gain1000
Pd - Power Dissipation20W
typeNPN
Current - Collector(Ic)8A
Operating Temperature-
Vce Saturation(VCE(sat))4V
Report an ErrorShow similar products (0) >

Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

These devices are manufactured using planar technology with a "base island" layout and monolithic Darlington configuration. The resulting transistors exhibit extremely high gain performance and very low saturation voltage.

Features

AI Translation
  • Low collector-emitter saturation voltage
  • Integrated anti-parallel collector-emitter diode

Applications

AI Translation
  • General-purpose linear and switching applications