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onsemi TIP122GRoHS

Manufacturer
onsemi
MPN
TIP122G
LCSC Part #
C897224
Packaging
TO-220AB
Customer #
Key Attributes
100V 1000 5A NPN TO-220AB Single Bipolar Transistors RoHS
Datasheetpdf icononsemi TIP122G
In-Stock: 2
2 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 1.2136$ 1.21
10+$ 1.0317$ 10.32
30+$ 0.9407$ 28.22
100+$ 0.8254$ 82.54
500+$ 0.7701$ 385.05
1,000+$ 0.7425$ 742.50
Standard Packaging50/Full Tube
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors
Manufactureronsemi
PackagingTO-220AB
Current - Collector Cutoff200uA
Operating Temperature-65℃~+150℃@(Tj)
Vbe On(VBE(on))2.5V
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO5V
DC Current Gain1000
Current - Collector(Ic)5A
Pd - Power Dissipation2W
typeNPN
Vce Saturation(VCE(sat))4V@5A,20mA
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Introduction

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Designed for general-purpose amplifier and low-speed switching applications.

Features

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  • High DC current gain — hFE = 2500 (typical), @ IC = 4.0 Adc
  • Collector-emitter sustaining voltage — @ 100 mA ADC
  • Low collector-emitter saturation voltage — VCE(sat) = 2.0 Vdc (max), @ IC = 3.0 Adc; VCE(sat) = 4.0 Vdc (max), @ IC = 5.0 Adc
  • Monolithic structure with built-in base-emitter shunt resistor
  • Available in lead-free package*

Applications

AI Translation
  • General-purpose amplifier
  • Low-speed switching applications