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Winbond W25Q80BLSNIG product image
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Winbond W25Q80BLSNIGRoHS

Manufacturer
WinbondAsian Brands
MPN
W25Q80BLSNIG
LCSC Part #
C409017
Packaging
SOP-8
Customer #
Key Attributes
2.3V~3.6V 8Mbit 80MHz SPI SOP-8 Memory (ICs) RoHS
Datasheetpdf iconWinbond W25Q80BLSNIG
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QtyUnit Price(Reference Only)Total Amount
1+$ 0.4801$ 0.48
200+$ 0.1853$ 37.06
500+$ 0.1791$ 89.55
1,000+$ 0.176$ 176.00
Standard Packaging2400/Full Reel
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Products Specifications

All
TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory (ICs)
ManufacturerWinbond
PackagingSOP-8
Voltage - Supply2.3V~3.6V
Memory Size8Mbit
Operating temperature-40℃~+85℃
Program / Erase Cycles100,000 cycles
Clock Frequency80MHz
Features-
Data Retention - TDR (Year)20 Years
Block Erase Time(tBE)-
Write Cycle Time(tWC)-
Page Programming Time (Tpp)-
InterfaceSPI
Standby Supply Current1uA

Introduction

AI Translation

The W25Q80BL (8M-bit) Serial Flash memory provides a storage solution for systems with limited space, pins and power. The 25Q series offers flexibility and performance well beyond ordinary Serial Flash devices. They are ideal for code shadowing to RAM, executing code directly from Dual/Quad SPI (XIP) and storing voice, text and data. The device operates on a single 2.3V to 3.6V power supply with current consumption as low as 4mA active and 1μA for power-down. The W25Q80BL array is organized into 4,096 programmable pages of 256-bytes each. Up to 256 bytes can be programmed at a time. Pages can be erased in groups of 16 (4KB sector erase), groups of 128 (32KB block erase), groups of 256 (64KB block erase) or the entire chip (chip erase). The W25Q80BL has 256 erasable sectors and 16 erasable blocks respectively. The small 4KB sectors allow for greater flexibility in applications that require data and parameter storage. The W25Q80BL supports the standard Serial Peripheral Interface (SPI), and a high performance Dual/Quad output as well as Dual/Quad I/O SPI: Serial Clock, Chip Select, Serial Data I/O0 (DI), I/O1 (DO), I/O2 (/WP), and I/O3 (/HOLD). SPI clock frequencies of up to 50MHz are supported allowing equivalent clock rates of 100MHz (50MHz x 2) for Dual I/O and 200MHz (50MHz x 4) for Quad I/O when using the Fast Read Dual/Quad I/O instructions. These transfer rates can outperform standard Asynchronous 8 and 16-bit Parallel Flash memories. The Continuous Read Mode allows for efficient memory access with as few as 8-clocks of instruc