DIODES ZXGD3006E6TA
| Manufacturer | |
| MPN | ZXGD3006E6TA |
| LCSC Part # | C526792 |
| Packaging | SOT-26 |
| Customer # | |
| Key Attributes | 40V 10A Gate Driver in SOT26 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Power Management (PMIC)/Gate Drivers | |
| Manufacturer | DIODES | |
| Packaging | SOT-26 | |
| Input Logic Level - Low | - | |
| Low Level Delay Time | - | |
| High Level Delay Time | - | |
| Quiescent Current | 50nA | |
| Input Logic Level - High | - | |
| Operating Temperature | -55℃~+150℃ | |
| Voltage - Supply | 40V | |
| Driven Configuration | Low Side | |
| Current - Output Low(IOL) | 3.8A | |
| Rise Time | 48ns | |
| Fall Time | 35ns | |
| Features | -;Interleaved conduction protection | |
| Current - Output High(IOH) | 4A | |
| Load Type | MOSFET;IGBT |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
The ZXGD3006E6 is a 40V Gate Driver for switching IGBTs and SiC MOSFETs. It can transfer up to 10A peak source/sink current into the gate for effective charging and discharging of a large capacitive load. The ZXGD3006E6 can drive typically 4A into the low gate impedance of an IGBT, with just 1mA input from a controller. Also, the turn-on and turn-off switching behavior of the IGBT can be individually tailored to suit an application. In particular, by defining the switching characteristics appropriately, EMI and cross conduction can be reduced.
Features
- High-Gain Buffer with Typically 4A Output from 1mA Input
- 40V Supply for +20V to -18V Gate Driving to Prevent dV/dt Induced False Triggering
- Emitter-Follower that is Rugged to Latch-Up / Shoot-Through Issues, and Delivers <10ns Propagation Delay Time
- Optimized Pin-Out to Simplify PCB Layout and Reduce Parasitic Trace Inductances
- Near-Zero Quiescent Supply Current
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free. “Green” Device
- Qualified to AEC-Q101 Standards for High Reliability
- An Automotive-Compliant Part is Available Under Separate Datasheet (ZXGD3006E6Q)
Applications
- Gate driving IGBTs and SiC MOSFETs in DC-DC Converters in Electric Cars
- Gate driving IGBTs and SiC MOSFETs in Automotive Active Suspension Systems
- Gate driving IGBTs and SiC MOSFETs in Solar Inverters
- Gate driving IGBTs and SiC MOSFETs in Power Supplies Plasma Display Panel Power Modules
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.529 | $ 0.53 |
| 10+ | $ 0.4236 | $ 4.24 |
| 30+ | $ 0.3716 | $ 11.15 |
| 100+ | $ 0.3197 | $ 31.97 |
| 500+ | $ 0.2743 | $ 137.15 |
| 1,000+ | $ 0.258 | $ 258.00 |
Standard Packaging3000/Full Reel | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Power Management (PMIC)/Gate Drivers | |
| Manufacturer | DIODES | |
| Packaging | SOT-26 | |
| Input Logic Level - Low | - | |
| Low Level Delay Time | - | |
| High Level Delay Time | - | |
| Quiescent Current | 50nA | |
| Input Logic Level - High | - | |
| Operating Temperature | -55℃~+150℃ | |
| Voltage - Supply | 40V | |
| Driven Configuration | Low Side | |
| Current - Output Low(IOL) | 3.8A | |
| Rise Time | 48ns | |
| Fall Time | 35ns | |
| Features | -;Interleaved conduction protection | |
| Current - Output High(IOH) | 4A | |
| Load Type | MOSFET;IGBT |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
The ZXGD3006E6 is a 40V Gate Driver for switching IGBTs and SiC MOSFETs. It can transfer up to 10A peak source/sink current into the gate for effective charging and discharging of a large capacitive load. The ZXGD3006E6 can drive typically 4A into the low gate impedance of an IGBT, with just 1mA input from a controller. Also, the turn-on and turn-off switching behavior of the IGBT can be individually tailored to suit an application. In particular, by defining the switching characteristics appropriately, EMI and cross conduction can be reduced.
Features
- High-Gain Buffer with Typically 4A Output from 1mA Input
- 40V Supply for +20V to -18V Gate Driving to Prevent dV/dt Induced False Triggering
- Emitter-Follower that is Rugged to Latch-Up / Shoot-Through Issues, and Delivers <10ns Propagation Delay Time
- Optimized Pin-Out to Simplify PCB Layout and Reduce Parasitic Trace Inductances
- Near-Zero Quiescent Supply Current
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free. “Green” Device
- Qualified to AEC-Q101 Standards for High Reliability
- An Automotive-Compliant Part is Available Under Separate Datasheet (ZXGD3006E6Q)
Applications
- Gate driving IGBTs and SiC MOSFETs in DC-DC Converters in Electric Cars
- Gate driving IGBTs and SiC MOSFETs in Automotive Active Suspension Systems
- Gate driving IGBTs and SiC MOSFETs in Solar Inverters
- Gate driving IGBTs and SiC MOSFETs in Power Supplies Plasma Display Panel Power Modules
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8542399000 |
| USHTS | 8542390001 |
| TARIC | 8542399000 |
| CAHTS | 8542390000 |
| BRHTS | 85423999 |
| INHTS | 85423900 |
| MXHTS | 8542.39.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8542399000 |
| USHTS | 8542390001 |
| TARIC | 8542399000 |
| Type | Details |
|---|---|
| CAHTS | 8542390000 |
| BRHTS | 85423999 |
| INHTS | 85423900 |
| MXHTS | 8542.39.99 |



