LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
Infineon IRS2111STRPBF product image
Images for reference only

Infineon IRS2111STRPBFRoHS

Manufacturer
MPN
IRS2111STRPBF
LCSC Part #
C538275
Packaging
SOIC-8
Customer #
Key Attributes
10V~20V 420mA 200mA SOIC-8 Gate Drivers RoHS
Datasheetpdf iconInfineon IRS2111STRPBF
Out of Stock
Notify Me
Add to BOM List
QtyUnit Price(Reference Only)Total Amount
1+$ 1.5221$ 1.52
200+$ 0.5898$ 117.96
500+$ 0.5692$ 284.60
1,000+$ 0.5581$ 558.10
Standard Packaging2500/Full Reel
Better price for more quantity?
$

Products Specifications

Show similar products (0) >
TypeDescription
CategoryIntegrated Circuits (ICs)/Power Management (PMIC)/Gate Drivers
ManufacturerInfineon
PackagingSOIC-8
Input Logic Level - Low-
Low Level Delay Time-
High Level Delay Time-
Quiescent Current-
Input Logic Level - High-
Operating Temperature-40℃~+125℃
Voltage - Supply10V~20V
Driven ConfigurationHalf-Bridge
Current - Output Low(IOL)420mA
Rise Time75ns
Fall Time35ns
FeaturesUnder Voltage Protection;Dead-time control;Interleaved conduction protection
Current - Output High(IOH)200mA
Load TypeMOSFET;IGBT

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

The IRS2111 is a high voltage, high speed power MOSFET and IGBT driver with dependent high-side and low-side referenced output channels designed for half-bridge applications. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic input is compatible with standard CMOS outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver crossconduction. Internal deadtime is provided to avoid shoot-through in the output half-bridge. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600 V.

Features

AI Translation
  • Floating channel designed for bootstrap operation
  • Fully operational to +600 V
  • Tolerant to negative transient voltage, dV/dt immune
  • Gate drive supply range from 10 V to 20 V
  • Undervoltage lockout for both channels
  • CMOS Schmitt-triggered inputs with pull-down
  • Matched propagation delay for both channels
  • Internally set deadtime
  • High-side output in phase with input
  • RoHS compliant