Wuxi China Resources Huajing Microelectronics CS10N70FA9R
| Manufacturer | Wuxi China Resources Huajing MicroelectronicsAsian Brands |
| MPN | CS10N70FA9R |
| LCSC Part # | C162369 |
| Packaging | TO-220F |
| Customer # | |
| Key Attributes | MOSFET N-CH 700V 10A TO-220F |
| Datasheet | Wuxi China Resources Huajing Microelectronics CS10N70FA9R |
| Alternative Parts | 5 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Wuxi China Resources Huajing Microelectronics | |
| Packaging | TO-220F | |
| Output Capacitance(Coss) | 120pF | |
| Ciss-Input Capacitance | 1.563nF | |
| Pd - Power Dissipation | 40W | |
| Configuration | - | |
| Operating Temperature | - | |
| Drain to Source Voltage | 700V | |
| Current - Continuous Drain(Id) | 10A | |
| Reverse Transfer Capacitance (Crss) | 6.2pF | |
| RDS(on) | 1.05Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 34nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Wuxi China Resources Huajing Microelectronics | |
| Packaging | TO-220F | |
| Output Capacitance(Coss) | 120pF | |
| Ciss-Input Capacitance | 1.563nF | |
| Pd - Power Dissipation | 40W | |
| Configuration | - | |
| Operating Temperature | - | |
| Drain to Source Voltage | 700V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 10A | |
| Reverse Transfer Capacitance (Crss) | 6.2pF | |
| RDS(on) | 1.05Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 34nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Introduction
CS10N70F A9R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard.
Features
- Fast Switching
- Low ON Resistance(Rdson≤1.05Ω)
- Low Gate Charge (Typical Data: 34nC)
- Low Reverse transfer capacitances(Typical: 6.2pF)
- 100% Single Pulse avalanche energy Test
Applications
- Power switch circuit of adaptor and charger.
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.7555 | $ 0.76 |
| 10+ | $ 0.6369 | $ 6.37 |
| 50+ | $ 0.5768 | $ 28.84 |
| 100+ | $ 0.5183 | $ 51.83 |
| 500+ | $ 0.4826 | $ 241.30 |
| 1,000+ | $ 0.4647 | $ 464.70 |
Standard Packaging50/Full Tube | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Wuxi China Resources Huajing Microelectronics | |
| Packaging | TO-220F | |
| Output Capacitance(Coss) | 120pF | |
| Ciss-Input Capacitance | 1.563nF | |
| Pd - Power Dissipation | 40W | |
| Configuration | - | |
| Operating Temperature | - | |
| Drain to Source Voltage | 700V | |
| Current - Continuous Drain(Id) | 10A | |
| Reverse Transfer Capacitance (Crss) | 6.2pF | |
| RDS(on) | 1.05Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 34nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Wuxi China Resources Huajing Microelectronics | |
| Packaging | TO-220F | |
| Output Capacitance(Coss) | 120pF | |
| Ciss-Input Capacitance | 1.563nF | |
| Pd - Power Dissipation | 40W | |
| Configuration | - | |
| Operating Temperature | - | |
| Drain to Source Voltage | 700V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 10A | |
| Reverse Transfer Capacitance (Crss) | 6.2pF | |
| RDS(on) | 1.05Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 34nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Introduction
CS10N70F A9R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard.
Features
- Fast Switching
- Low ON Resistance(Rdson≤1.05Ω)
- Low Gate Charge (Typical Data: 34nC)
- Low Reverse transfer capacitances(Typical: 6.2pF)
- 100% Single Pulse avalanche energy Test
Applications
- Power switch circuit of adaptor and charger.
C162369 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| CS10N65FA9R | Wuxi China Resources Huajing Microelectronics | Similar | TO-220F | 0 | $ 0.944 | ||
| CS10N70FA9D | Wuxi China Resources Huajing Microelectronics | Similar | TO-220F-3 | 0 | $ 0.9976 | ||
| CS10N80FA9D | Wuxi China Resources Huajing Microelectronics | Similar | TO-220F-3 | 0 | $ 1.0561 | ||
| CS12N65FA9R | Wuxi China Resources Huajing Microelectronics | Similar | TO-220F | 0 | $ 0.9407 | ||
| CS12N65FA9H | Wuxi China Resources Huajing Microelectronics | Similar | TO-220F | 0 | $ 1.5012 |



