DIODES DMN1019USN-7
| Manufacturer | |
| MPN | DMN1019USN-7 |
| LCSC Part # | C145103 |
| Packaging | SC-59 |
| Customer # | |
| Key Attributes | MOSFET N-CH 12V 9.3A SC-59 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | SC-59 | |
| Drain to Source Voltage | 12V | |
| Output Capacitance(Coss) | - | |
| Current - Continuous Drain(Id) | 9.3A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 800mV | |
| Pd - Power Dissipation | 1.2W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 41mΩ@1.2V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 50.6nC@8V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Features
AI Translation
- Low On-Resistance
- ESD Protected Gate
- Totally Lead-Free & Fully RoHS compliant
- Halogen and Antimony Free. “Green” Device Qualified to AEC-Q101 Standards for High Reliability
Applications
AI Translation
- Load Switch
- DC-DC Converters
- Power Management Functions
In-Stock: 33,670
33,670 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.1905 | $ 0.95 |
| 50+ | $ 0.1504 | $ 7.52 |
| 150+ | $ 0.1332 | $ 19.98 |
| 500+ | $ 0.1117 | $ 55.85 |
| 3,000+ | $ 0.0998 | $ 299.40 |
| 6,000+ | $ 0.094 | $ 564.00 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | SC-59 | |
| Drain to Source Voltage | 12V | |
| Output Capacitance(Coss) | - | |
| Current - Continuous Drain(Id) | 9.3A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 800mV | |
| Pd - Power Dissipation | 1.2W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 41mΩ@1.2V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 50.6nC@8V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Features
AI Translation
- Low On-Resistance
- ESD Protected Gate
- Totally Lead-Free & Fully RoHS compliant
- Halogen and Antimony Free. “Green” Device Qualified to AEC-Q101 Standards for High Reliability
Applications
AI Translation
- Load Switch
- DC-DC Converters
- Power Management Functions
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



