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DIODES DMN3110LCP3-7 product image
  • DMN3110LCP3-7 thumbnail 1
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  • Pinout Diagram
  • Footprint Diagram
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DIODES DMN3110LCP3-7RoHS

Manufacturer
DIODES
MPN
DMN3110LCP3-7
LCSC Part #
C443826
Packaging
X2-DSN1006-3
Customer #
Key Attributes
MOSFET N-CH 30V 3.2A X2-DSN1006-3
Datasheetpdf iconDIODES DMN3110LCP3-7

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDIODES
PackagingX2-DSN1006-3
Drain to Source Voltage30V
Current - Continuous Drain(Id)3.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))650mV
Pd - Power Dissipation500mW
Reverse Transfer Capacitance (Crss@Vds)10pF
RDS(on)80mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)150pF
Gate Charge(Qg)1.52uC@4.5V
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

This new generation MOSFET is designed to minimize the footprint in handheld and mobile application. It can be used to replace many small signals MOSFET with as really small footprint.

Features

AI Translation
  • Low Qg & Qgd
  • Small Footprint
  • Low Profile 0.30mm Height
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. “Green” Device

Applications

AI Translation
  • Battery Management
  • Load Switch
  • Battery Protection
  • Handheld and Mobile Application
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