DIODES DMP3056LSD-13
| Manufacturer | |
| MPN | DMP3056LSD-13 |
| LCSC Part # | C508209 |
| Packaging | SO-8 |
| Customer # | |
| Key Attributes | MOSFET P-CH ARR 30V 6.9A SO-8 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | SO-8 | |
| Current - Continuous Drain(Id) | 6.9A | |
| RDS(on) | 65mΩ@4.5V | |
| Pd - Power Dissipation | 2.5W | |
| Gate Threshold Voltage (Vgs(th)) | 1.7V | |
| Drain to Source Voltage | 30V | |
| Reverse Transfer Capacitance (Crss@Vds) | 92pF | |
| Number | 2 P-Channel | |
| Input Capacitance(Ciss) | 722pF | |
| Gate Charge(Qg) | 13.7nC@15V | |
| Operating Temperature | -55℃~+150℃ |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Features
AI Translation
- Dual P-Channel MOSFET
- Low On-Resistance
- Low Gate Threshold Voltage
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free. “Green” Device Qualified to AEC-Q101 Standards for High Reliability
Applications
AI Translation
- Power Management Functions
- Backlighting DC-DC Converters
In-Stock: 130
130 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.243 | $ 1.22 |
| 50+ | $ 0.1937 | $ 9.69 |
| 150+ | $ 0.1725 | $ 25.88 |
| 500+ | $ 0.1461 | $ 73.05 |
| 2,500+ | $ 0.1344 | $ 336.00 |
| 5,000+ | $ 0.1273 | $ 636.50 |
Standard Packaging2500/Full Reel | ||
Better price for more quantity?
$
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | SO-8 | |
| Current - Continuous Drain(Id) | 6.9A | |
| RDS(on) | 65mΩ@4.5V | |
| Pd - Power Dissipation | 2.5W | |
| Gate Threshold Voltage (Vgs(th)) | 1.7V | |
| Drain to Source Voltage | 30V | |
| Reverse Transfer Capacitance (Crss@Vds) | 92pF | |
| Number | 2 P-Channel | |
| Input Capacitance(Ciss) | 722pF | |
| Gate Charge(Qg) | 13.7nC@15V | |
| Operating Temperature | -55℃~+150℃ |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Features
AI Translation
- Dual P-Channel MOSFET
- Low On-Resistance
- Low Gate Threshold Voltage
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free. “Green” Device Qualified to AEC-Q101 Standards for High Reliability
Applications
AI Translation
- Power Management Functions
- Backlighting DC-DC Converters
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



