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FMS(Formosa Microsemi) 2N7002E
| Manufacturer | FMS(Formosa Microsemi)Asian Brands |
| MPN | 2N7002E |
| LCSC Part # | C557693 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | N-Channel, Current:0.34A, Breakdown Voltage:60V |
| Datasheet |  FMS(Formosa Microsemi) 2N7002E |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | FMS(Formosa Microsemi) | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 340mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 350mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF | |
| RDS(on) | 2.5Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 18pF | |
| Gate Charge(Qg) | 2.4nC@30V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 50 |
| Multiple | 50 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- ESD protection 2.0KV (Human Body Model)
- Advanced trench process technology
- High-density cell design for ultra-low on-resistance
- Ultra-low leakage current in off-state
- Compliant with RoHS 2002/95/EC directive
Applications
AI Translation
- Designed for battery-powered systems, solid-state relay drivers, relays, displays, lamps, solenoids, memories, and more.
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | FMS(Formosa Microsemi) | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 340mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 350mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF | |
| RDS(on) | 2.5Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 18pF | |
| Gate Charge(Qg) | 2.4nC@30V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 50 |
| Multiple | 50 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- ESD protection 2.0KV (Human Body Model)
- Advanced trench process technology
- High-density cell design for ultra-low on-resistance
- Ultra-low leakage current in off-state
- Compliant with RoHS 2002/95/EC directive
Applications
AI Translation
- Designed for battery-powered systems, solid-state relay drivers, relays, displays, lamps, solenoids, memories, and more.
C557693 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |