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HUASHUO IRLML2502 product image
  • IRLML2502 thumbnail 1
  • IRLML2502 thumbnail 2
  • IRLML2502 thumbnail 3
  • Pinout Diagram
  • Footprint Diagram
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HUASHUO IRLML2502RoHS

Manufacturer
HUASHUOAsian Brands
MPN
IRLML2502
LCSC Part #
C518800
Packaging
SOT-23
Customer #
Key Attributes
MOSFET N-CH 20V 3.6A SOT-23
Datasheetpdf iconHUASHUO IRLML2502
In-Stock: 2,720
2,720 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
10+$ 0.056$ 0.56
100+$ 0.0452$ 4.52
300+$ 0.0397$ 11.91
3,000+$ 0.03$ 90.00
6,000+$ 0.0267$ 160.20
9,000+$ 0.0251$ 225.90
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHUASHUO
PackagingSOT-23
Drain to Source Voltage20V
Current - Continuous Drain(Id)3.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation1W
Reverse Transfer Capacitance (Crss@Vds)35pF
RDS(on)70mΩ@2.5V
Number1 N-channel
Input Capacitance(Ciss)310pF
Gate Charge(Qg)4.6nC@4.5V

Additional Information

TypeDetails
Minimum10
Multiple10
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

The IRLML2502 is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The IRLML2502 meets the RoHS and Green Product requirement with full function reliability approved. Green Device Available

Features

AI Translation
  • Super Low Gate Charge
  • Excellent Cdv/dt effect decline
  • Advanced high cell density Trench technology