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Infineon IRFP260MPBFRoHS

Manufacturer
MPN
IRFP260MPBF
LCSC Part #
C2679
Packaging
TO-247AC
Customer #
Key Attributes
MOSFET N-CH 200V 50A TO-247AC
Datasheetpdf iconInfineon IRFP260MPBF
In-Stock: 40,430
40,430 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 1.067$ 1.07
10+$ 0.8892$ 8.89
25+$ 0.6732$ 16.83
100+$ 0.5843$ 58.43
400+$ 0.5319$ 212.76
800+$ 0.5049$ 403.92
Standard Packaging25/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingTO-247AC
Drain to Source Voltage200V
Output Capacitance(Coss)4.057nF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation300W
Reverse Transfer Capacitance (Crss@Vds)603pF
RDS(on)40mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.057nF
Gate Charge(Qg)234nC@10V
TypeN-Channel

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging25
Sales UnitPiece

Introduction

AI Translation

Fifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.

Features

AI Translation
  • Advanced Process Technology
  • Dynamic dv/dt Rating
  • 175°C Operating Temperature
  • Fast Switching
  • Fully Avalanche Rated
  • Ease of Paralleling
  • Simple Drive Requirements
  • Lead-Free