Infineon BSO080P03NS3 G
| Manufacturer | |
| MPN | BSO080P03NS3 G |
| LCSC Part # | C534532 |
| Packaging | SOIC-8 |
| Customer # | |
| Key Attributes | 30V 14.8A 1.9V 2.5W 8mΩ@10V 1 P-Channel SOIC-8 Single FETs, MOSFETs RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | SOIC-8 | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 14.8A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.9V | |
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 225pF | |
| RDS(on) | 8mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 6.75nF | |
| Gate Charge(Qg) | 81nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- SO8 package, single P-channel
- JEDEC-compliant for target applications
- Operating temperature up to 150°C
- VGS = 25 V, optimized for notebook applications
- Lead-free plating; RoHS compliant
- Halogen-free per IEC61249-2-21
Applications
AI Translation
- Battery Management
- Load Switch
Out of Stock
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Add to BOM List
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.9656 | $ 0.97 |
| 10+ | $ 0.8067 | $ 8.07 |
| 30+ | $ 0.7281 | $ 21.84 |
| 100+ | $ 0.651 | $ 65.10 |
| 500+ | $ 0.6031 | $ 301.55 |
| 1,000+ | $ 0.58 | $ 580.00 |
Standard Packaging2500/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | SOIC-8 | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 14.8A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.9V | |
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 225pF | |
| RDS(on) | 8mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 6.75nF | |
| Gate Charge(Qg) | 81nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- SO8 package, single P-channel
- JEDEC-compliant for target applications
- Operating temperature up to 150°C
- VGS = 25 V, optimized for notebook applications
- Lead-free plating; RoHS compliant
- Halogen-free per IEC61249-2-21
Applications
AI Translation
- Battery Management
- Load Switch
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

