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Infineon IPB027N10N3 G product image
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Infineon IPB027N10N3 GRoHS

Manufacturer
Infineon
MPN
IPB027N10N3 G
LCSC Part #
C386326
Packaging
TO-263-3
Customer #
Key Attributes
MOSFET N-CH 100V 120A TO-263-3
Datasheetpdf iconInfineon IPB027N10N3 G
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QtyUnit Price(Reference Only)Total Amount
1+$ 3.2915$ 3.29
10+$ 2.8183$ 28.18
30+$ 2.5351$ 76.05
100+$ 2.2502$ 225.02
500+$ 2.1182$ 1059.10
1,000+$ 2.0602$ 2060.20
Standard Packaging1000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingTO-263-3
Drain to Source Voltage100V
Output Capacitance(Coss)2.58nF
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation300W
Reverse Transfer Capacitance (Crss@Vds)69pF
RDS(on)2.7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)14.8nF
Gate Charge(Qg)206nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging1000
Sales UnitPiece

Features

AI Translation
  • N-channel, normally-on
  • Excellent gate charge × RDS(on) figure of merit (FOM)
  • Ultra-low on-resistance RDS(on)
  • Operating temperature up to 175°C
  • Lead-free pin plating; RoHS compliant
  • Qualified per JEDEC standards for target applications
  • Ideal for high-frequency switching and synchronous rectification
  • Halogen-free per IEC61249-2-21