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Infineon IPB200N25N3 G product image
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Infineon IPB200N25N3 GRoHS

Manufacturer
Infineon
MPN
IPB200N25N3 G
LCSC Part #
C536579
Packaging
TO-263-3
Customer #
Key Attributes
MOSFET N-CH 250V 64A TO-263-3
Datasheetpdf iconInfineon IPB200N25N3 G
In-Stock: 7
7 In stock, ships now
Not recommended for new designs
Once stock is depleted, this item will be marked as "Out of Stock."
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QtyUnit PriceTotal Amount
1+$ 3.3263$ 3.33
10+$ 2.8249$ 28.25
30+$ 2.5269$ 75.81
100+$ 2.2241$ 222.41
500+$ 2.0857$ 1042.85
1,000+$ 2.0222$ 2022.20
Standard Packaging1000/Full Reel

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingTO-263-3
Drain to Source Voltage250V
Output Capacitance(Coss)297pF
Current - Continuous Drain(Id)64A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation300W
Reverse Transfer Capacitance (Crss@Vds)4pF
RDS(on)20mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.34nF
Gate Charge(Qg)64nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging1000
Sales UnitPiece

Features

AI Translation
  • N-channel, normal level
  • Excellent gate charge x RDS(on) product (FOM)
  • Very low on-resistance RDS(on)
  • 175 °C operating temperature
  • Pb-free lead plating; RoHS compliant
  • Qualified according to JEDEC for target application
  • Halogen-free according to IEC61249-2-21
  • Ideal for high-frequency switching and synchronous rectification