Infineon IPB600N25N3 G
| Manufacturer | |
| MPN | IPB600N25N3 G |
| LCSC Part # | C536594 |
| Packaging | TO-263-3 |
| Customer # | |
| Key Attributes | 250V 25A 4V 136W 60mΩ@10V 1 N-channel N-Channel TO-263-3 Single FETs, MOSFETs RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-263-3 | |
| Drain to Source Voltage | 250V | |
| Output Capacitance(Coss) | 112pF | |
| Current - Continuous Drain(Id) | 25A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 136W | |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF | |
| RDS(on) | 60mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.77nF | |
| Gate Charge(Qg) | 22nC | |
| Vgs | ±20V | |
| Type | N-Channel |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 1000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- N-channel, normally-on
- Excellent gate charge × RDS(on) product (figure of merit)
- Ultra-low on-resistance RDS(on)
- Operating temperature up to 175°C
- Lead-free pin plating; RoHS compliant
- JEDEC qualified for target applications
- Halogen-free per IEC61249-2-21
- Suitable for high-frequency switching and synchronous rectification
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 1.9719 | $ 1.97 |
| 10+ | $ 1.9298 | $ 19.30 |
| 30+ | $ 1.9017 | $ 57.05 |
| 100+ | $ 1.6897 | $ 168.97 |
Standard Packaging1000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-263-3 | |
| Drain to Source Voltage | 250V | |
| Output Capacitance(Coss) | 112pF | |
| Current - Continuous Drain(Id) | 25A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 136W | |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF | |
| RDS(on) | 60mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.77nF | |
| Gate Charge(Qg) | 22nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 1000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- N-channel, normally-on
- Excellent gate charge × RDS(on) product (figure of merit)
- Ultra-low on-resistance RDS(on)
- Operating temperature up to 175°C
- Lead-free pin plating; RoHS compliant
- JEDEC qualified for target applications
- Halogen-free per IEC61249-2-21
- Suitable for high-frequency switching and synchronous rectification
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



