Infineon IPP048N12N3 G
| Manufacturer | |
| MPN | IPP048N12N3 G |
| LCSC Part # | C537133 |
| Packaging | TO-220-3 |
| Customer # | |
| Key Attributes | MOSFET 120V 100A TO-220-3 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-220-3 | |
| Drain to Source Voltage | 120V | |
| Current - Continuous Drain(Id) | 100A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 300W | |
| Reverse Transfer Capacitance (Crss@Vds) | 81pF | |
| RDS(on) | 4.8mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 12nF | |
| Gate Charge(Qg) | 182nC@10V |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- N-channel, normally-on
- Excellent gate charge × RDS(on) product (figure of merit)
- Ultra-low on-resistance RDS(on)
- Operating temperature up to 175°C
- Lead-free lead finish; RoHS compliant
- Qualified per JEDEC standards for target applications
- Ideal for high-frequency switching and synchronous rectification
- Halogen-free per IEC61249-2-21
In-Stock: 3
3 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 3.5635 | $ 3.56 |
| 10+ | $ 3.026 | $ 30.26 |
| 50+ | $ 2.7073 | $ 135.37 |
| 100+ | $ 2.3838 | $ 238.38 |
| 500+ | $ 2.2357 | $ 1117.85 |
| 1,000+ | $ 2.1681 | $ 2168.10 |
Standard Packaging50/Full Tube | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-220-3 | |
| Drain to Source Voltage | 120V | |
| Current - Continuous Drain(Id) | 100A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 300W | |
| Reverse Transfer Capacitance (Crss@Vds) | 81pF | |
| RDS(on) | 4.8mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 12nF | |
| Gate Charge(Qg) | 182nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- N-channel, normally-on
- Excellent gate charge × RDS(on) product (figure of merit)
- Ultra-low on-resistance RDS(on)
- Operating temperature up to 175°C
- Lead-free lead finish; RoHS compliant
- Qualified per JEDEC standards for target applications
- Ideal for high-frequency switching and synchronous rectification
- Halogen-free per IEC61249-2-21
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



