Infineon IPT012N08N5
| Manufacturer | |
| MPN | IPT012N08N5 |
| LCSC Part # | C531199 |
| Packaging | HSOF-8 |
| Customer # | |
| Key Attributes | MOSFET N-CH 80V HSOF-8 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | HSOF-8 | |
| Drain to Source Voltage | 80V | |
| Output Capacitance(Coss) | 2nF | |
| Current - Continuous Drain(Id) | 300A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 375W | |
| Reverse Transfer Capacitance (Crss@Vds) | 86pF | |
| RDS(on) | 1.2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 13nF | |
| Gate Charge(Qg) | 178nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Ideal for high frequency switching and sync. rec.
- Excellent gate charge x RDS(on) product (FOM)
- Very low on-resistance RDS(on)
- N-channel, normal level
- 100% avalanche tested
- Pb-free plating; RoHS compliant
- Qualified according to JEDEC for target applications
- Halogen-free according to IEC61249-2-21
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 1.9946 | $ 1.99 |
| 10+ | $ 1.7092 | $ 17.09 |
| 30+ | $ 1.5319 | $ 45.96 |
| 100+ | $ 1.3497 | $ 134.97 |
| 500+ | $ 1.2658 | $ 632.90 |
| 1,000+ | $ 1.2303 | $ 1230.30 |
Standard Packaging2000/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | HSOF-8 | |
| Drain to Source Voltage | 80V | |
| Output Capacitance(Coss) | 2nF | |
| Current - Continuous Drain(Id) | 300A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 375W | |
| Reverse Transfer Capacitance (Crss@Vds) | 86pF | |
| RDS(on) | 1.2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 13nF | |
| Gate Charge(Qg) | 178nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Ideal for high frequency switching and sync. rec.
- Excellent gate charge x RDS(on) product (FOM)
- Very low on-resistance RDS(on)
- N-channel, normal level
- 100% avalanche tested
- Pb-free plating; RoHS compliant
- Qualified according to JEDEC for target applications
- Halogen-free according to IEC61249-2-21
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



