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Infineon IRF1405STRLPBFRoHS

Manufacturer
Infineon
MPN
IRF1405STRLPBF
LCSC Part #
C459940
Packaging
D2PAK
Customer #
Key Attributes
55V 131A 4V 200W 5.3mΩ@10V 1 N-channel D2PAK Single FETs, MOSFETs RoHS
Datasheetpdf iconInfineon IRF1405STRLPBF
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QtyUnit Price(Reference Only)Total Amount
1+$ 1.3927$ 1.39
10+$ 1.3651$ 13.65
30+$ 1.3452$ 40.36
100+$ 1.3269$ 132.69
Standard Packaging800/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingD2PAK
Drain to Source Voltage55V
Current - Continuous Drain(Id)131A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation200W
RDS(on)5.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.48nF
Gate Charge(Qg)260nC@10V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging800
Sales UnitPiece

Introduction

AI Translation
  • The stripe planar design of HEXFET power MOSFETs utilizes the latest processing technology to achieve ultra-low on-resistance per unit silicon area. Additional features of this HEXFET power MOSFET include a 175°C junction operating temperature, fast switching speed, and improved repetitive avalanche ratings. These combined advantages make this design a highly efficient and reliable device suitable for a wide range of applications.

Features

AI Translation
  • Ultra-low on-resistance
  • Dynamic dv/dt rated
  • 175°C operating temperature
  • Fast switching
  • Repetitive avalanche rated up to maximum junction temperature Tjmax

Applications

AI Translation
  • Industrial motor drive