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Infineon IRF3205ZLPBFRoHS

Manufacturer
Infineon
MPN
IRF3205ZLPBF
LCSC Part #
C459958
Packaging
TO-262-3
Customer #
Key Attributes
MOSFET N-CH 55V 75A TO-262-3
Datasheetpdf iconInfineon IRF3205ZLPBF
In-Stock: 1
1 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 1.1175$ 1.12
10+$ 1.0929$ 10.93
30+$ 1.0745$ 32.24
100+$ 1.0576$ 105.76
Standard Packaging4000/Full Tube

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingTO-262-3
Drain to Source Voltage55V
Current - Continuous Drain(Id)75A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation170W
Reverse Transfer Capacitance (Crss@Vds)310pF
RDS(on)6.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.45nF
Gate Charge(Qg)110nC@10V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging4000
Sales UnitPiece

Introduction

AI Translation

This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Features

AI Translation
  • Advanced Process Technology
  • Ultra Low On-Resistance
  • 175°C Operating Temperature
  • Fast Switching
  • Repetitive Avalanche Allowed up to Tjmax
  • Lead-Free