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Infineon IRF540ZSTRLPBFRoHS

Manufacturer
Infineon
MPN
IRF540ZSTRLPBF
LCSC Part #
C459971
Packaging
TO-263-3
Customer #
Key Attributes
100V 36A 4V 92W 26.5mΩ@10V 1 N-channel TO-263-3 Single FETs, MOSFETs RoHS
Datasheetpdf iconInfineon IRF540ZSTRLPBF
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QtyUnit Price(Reference Only)Total Amount
1+$ 0.6153$ 0.62
10+$ 0.6015$ 6.02
30+$ 0.5923$ 17.77
100+$ 0.5831$ 58.31
Standard Packaging3200/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingTO-263-3
Drain to Source Voltage100V
Current - Continuous Drain(Id)36A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation92W
Reverse Transfer Capacitance (Crss@Vds)100pF
RDS(on)26.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.77nF
Gate Charge(Qg)63nC@10V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3200
Sales UnitPiece

Introduction

AI Translation

This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Features

AI Translation
  • Advanced Process Technology
  • Ultra Low On-Resistance
  • 175°C Operating Temperature
  • Fast Switching
  • Repetitive Avalanche Allowed up to Tjmax
  • Lead-Free