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Infineon IRFZ48NSTRLPBFRoHS

Manufacturer
MPN
IRFZ48NSTRLPBF
LCSC Part #
C538084
Packaging
D2PAK
Customer #
Key Attributes
55V 64A 4V 14mΩ@10V 1 N-channel D2PAK Single FETs, MOSFETs RoHS
Datasheetpdf iconInfineon IRFZ48NSTRLPBF
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QtyUnit Price(Reference Only)Total Amount
1+$ 1.5934$ 1.59
10+$ 1.3451$ 13.45
30+$ 1.2093$ 36.28
100+$ 1.015$ 101.50
500+$ 0.9471$ 473.55
800+$ 0.9163$ 733.04
Standard Packaging800/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingD2PAK
Drain to Source Voltage55V
Current - Continuous Drain(Id)64A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation3.8W;130W
Reverse Transfer Capacitance (Crss@Vds)120pF
RDS(on)14mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.97nF
Gate Charge(Qg)81nC@10V

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging800
Sales UnitPiece

Introduction

AI Translation

Advanced HEXFET power MOSFETs utilize advanced processing technology to achieve extremely low on-resistance per unit silicon area. This advantage, combined with the well-known fast switching speed and robust device design of HEXFET power MOSFETs, provides designers with an extremely efficient and reliable device suitable for a wide range of applications. The D2Pak is a surface-mount power package capable of accommodating die sizes up to HEX-4. It offers the highest power handling capability and the lowest possible on-resistance of any currently available surface-mount package. Due to its low internal connection resistance, the D2Pak is suited for high-current applications and can dissipate up to 2.0W of power in typical surface-mount applications. For low-profile applications, a through-hole version (IRFZ48NL) is available.

Features

AI Translation
  • Advanced process technology
  • Surface mount (IRFZ48NS)
  • Low-profile through-hole (IRFZ48NL)
  • 175°C operating temperature
  • Fast switching
  • Fully avalanche rated
  • Lead-free