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Infineon IRLZ44ZSTRLPBF product image
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Infineon IRLZ44ZSTRLPBFRoHS

Manufacturer
MPN
IRLZ44ZSTRLPBF
LCSC Part #
C538201
Packaging
D2PAK
Customer #
Key Attributes
MOSFET N-CH 55V 51A D2PAK
Datasheetpdf iconInfineon IRLZ44ZSTRLPBF
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingD2PAK
Drain to Source Voltage55V
Current - Continuous Drain(Id)51A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation80W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)13.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.62nF
Gate Charge(Qg)36nC@5V

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging800
Sales UnitPiece

Introduction

AI Translation

This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely eficient and reliable device for use in a wide variety of applications.

Features

AI Translation
  • Logic Level
  • Advanced Process Technology
  • Ultra Low On-Resistance
  • 175°C Operating Temperature
  • Fast Switching
  • Repetitive Avalanche Allowed up to Tjmax
  • Lead-Free