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onsemi NDT014LRoHS

Manufacturer
MPN
NDT014L
LCSC Part #
C274610
Packaging
SOT-223
Customer #
Key Attributes
MOSFET N-CH 60V 2.8A SOT-223
Datasheetpdf icononsemi NDT014L
In-Stock: 100
100 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 0.7523$ 0.75
10+$ 0.7339$ 7.34
30+$ 0.72$ 21.60
100+$ 0.7078$ 70.78
Standard Packaging4000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingSOT-223
Drain to Source Voltage60V
Output Capacitance(Coss)70pF
Current - Continuous Drain(Id)2.8A
Operating Temperature --65℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation3W
Reverse Transfer Capacitance (Crss@Vds)27pF
RDS(on)200mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)214pF
Gate Charge(Qg)5nC@4.5V
TypeN-Channel

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging4000
Sales UnitPiece

Introduction

AI Translation

These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.

Features

AI Translation
  • 2.8 A, 60 V. RDS(ON)=0.2 Ω @ VGS = 4.5 V; RDS(ON)=0.16 Ω @ VGS = 10 V.
  • High density cell design for extremely low RDS(ON).
  • High power and current handling capability in a widely used surface mount package.

Applications

AI Translation
  • DC motor control
  • DC/DC conversion