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PANJIT 2N7002KW_R1_00001 product image
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PANJIT 2N7002KW_R1_00001RoHS

Manufacturer
PANJITAsian Brands
MPN
2N7002KW_R1_00001
LCSC Part #
C313495
Packaging
SOT-323
Customer #
Key Attributes
MOSFET N-CH 60V 115mA SOT-323
Datasheetpdf iconPANJIT 2N7002KW_R1_00001
In-Stock: 3,040
3,040 In stock, ships now
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QtyUnit PriceTotal Amount
20+$ 0.0274$ 0.55
200+$ 0.0211$ 4.22
600+$ 0.0176$ 10.56
3,000+$ 0.0154$ 46.20
9,000+$ 0.0136$ 122.40
21,000+$ 0.0126$ 264.60
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerPANJIT
PackagingSOT-323
Drain to Source Voltage60V
Output Capacitance(Coss)10pF
Current - Continuous Drain(Id)115mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation200mW
Reverse Transfer Capacitance (Crss@Vds)5pF
RDS(on)4Ω@4.5V
Number1 N-channel
Input Capacitance(Ciss)35pF
Gate Charge(Qg)800pC@4.5V
TypeN-Channel
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Additional Information

TypeDetails
Minimum20
Multiple20
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

This P-type field-effect transistor is a rugged gate product manufactured using an advanced "Power Trench" process. It is optimized for power management applications requiring a wide range of gate drive voltages (4.5V to 25V).

Features

AI Translation
  • RDS(ON), VGS@10V,IDS@500mA = 3Ω
  • RDS(ON), VGS@4.5V,IDS@200mA = 4Ω
  • Advanced Trench Process Technology
  • High Density Cell Design For Ultra Low On-Resistance
  • Very Low Leakage Current In Off Condition
  • ESD Protected 2KV HBM
  • Lead free in compliance with EU RoHS 2011/65/EU directive
  • Green molding compound as per IEC61249 Std. (Halogen Free)

Applications

AI Translation
  • Power Management
  • Load Switch
  • Battery