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TI CSD23280F3TRoHS

Manufacturer
MPN
CSD23280F3T
LCSC Part #
C139374
Packaging
PicoStar-3
Customer #
Key Attributes
MOSFET P-CH 12V 1.8A PicoStar-3
Datasheetpdf iconTI CSD23280F3T
In-Stock: 355
355 In stock, ships now
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QtyUnit PriceTotal Amount
5+$ 0.1642$ 0.82
50+$ 0.1271$ 6.36
250+$ 0.1113$ 27.83
500+$ 0.0914$ 45.70
2,500+$ 0.0826$ 206.50
5,000+$ 0.0773$ 386.50
Standard Packaging250/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerTI
PackagingPicoStar-3
Configuration-
Drain to Source Voltage12V
Output Capacitance(Coss)95pF
Current - Continuous Drain(Id)1.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))650mV
Pd - Power Dissipation500mW
Reverse Transfer Capacitance (Crss@Vds)11.1pF
RDS(on)97mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)234pF
Gate Charge(Qg)1.23nC@4.5V
TypeP-Channel

Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging250
Sales UnitPiece

Introduction

AI Translation

This -12V, 97mΩ P-channel FemtoFET MOSFET is designed and optimized to minimize space occupied in many handheld and mobile applications. This technology enables significant package size reduction while replacing standard small-signal MOSFETs.

Features

AI Translation
  • Low on-resistance
  • Ultra-low Qg and Qgd
  • High drain operating current
  • Ultra-compact size: 0.73mm x 0.64mm
  • Ultra-thin package: max thickness 0.36mm
  • Integrated ESD protection diode: rated > 4kV HBM; rated > 2kV CDM
  • Lead-free and halogen-free
  • RoHS compliant

Applications

AI Translation
  • Optimized for load switch applications
  • Optimized for general-purpose switch applications
  • Battery applications
  • Handheld and mobile applications