VBsemi Elec IRF540NSTRPBF-VB
| Manufacturer | VBsemi ElecAsian Brands |
| MPN | IRF540NSTRPBF-VB |
| LCSC Part # | C558143 |
| Packaging | TO-263(D2PAK) |
| Customer # | |
| Key Attributes | MOSFET N-CH 100V 45A TO-263(D2PAK) |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-263(D2PAK) | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 410pF | |
| Current - Continuous Drain(Id) | 45A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 127W | |
| Reverse Transfer Capacitance (Crss@Vds) | 150pF | |
| RDS(on) | 30mΩ@10V;35mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.1nF | |
| Gate Charge(Qg) | 35nC@10V | |
| Type | N-Channel |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Trench power MOSFET
- 175 °C junction temperature
- Low thermal resistance package
- RoHS-compliant N-channel MOSFET available
In-Stock: 100
100 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.9642$ 0.8196 | $ 0.82 |
| 10+ | $ 0.7837$ 0.6662 | $ 6.66 |
| 50+ | $ 0.6934$ 0.5894 | $ 29.47 |
| 100+ | $ 0.6048$ 0.5141 | $ 51.41 |
| 500+ | $ 0.551$ 0.4684 | $ 234.20 |
| 1,000+ | $ 0.5225$ 0.4442 | $ 444.20 |
Standard Packaging50/Full Tube | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-263(D2PAK) | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 410pF | |
| Current - Continuous Drain(Id) | 45A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 127W | |
| Reverse Transfer Capacitance (Crss@Vds) | 150pF | |
| RDS(on) | 30mΩ@10V;35mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.1nF | |
| Gate Charge(Qg) | 35nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Trench power MOSFET
- 175 °C junction temperature
- Low thermal resistance package
- RoHS-compliant N-channel MOSFET available
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



