VBsemi Elec IRLR2705TRPBF-VB
| Manufacturer | VBsemi ElecAsian Brands |
| MPN | IRLR2705TRPBF-VB |
| LCSC Part # | C725098 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | MOSFET N-CH 60V 45A TO-252 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 140pF | |
| Current - Continuous Drain(Id) | 45A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 100W | |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF | |
| RDS(on) | 25mΩ@10V;30mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.5nF | |
| Gate Charge(Qg) | 11nC@10V | |
| Type | N-Channel |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Trench Power MOSFET
- 175°C junction temperature rated
- RoHS compliant
- Drain connected to heatsink
- N-Channel MOSFET
In-Stock: 58
58 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.5613$ 0.4772 | $ 0.48 |
| 10+ | $ 0.4496$ 0.3822 | $ 3.82 |
| 30+ | $ 0.4029$ 0.3425 | $ 10.28 |
| 100+ | $ 0.3425$ 0.2912 | $ 29.12 |
| 500+ | $ 0.2746$ 0.2335 | $ 116.75 |
| 1,000+ | $ 0.258$ 0.2193 | $ 219.30 |
Standard Packaging2500/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 140pF | |
| Current - Continuous Drain(Id) | 45A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 100W | |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF | |
| RDS(on) | 25mΩ@10V;30mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.5nF | |
| Gate Charge(Qg) | 11nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Trench Power MOSFET
- 175°C junction temperature rated
- RoHS compliant
- Drain connected to heatsink
- N-Channel MOSFET
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



