VBsemi Elec NDT451AN-VB
| Manufacturer | VBsemi ElecAsian Brands |
| MPN | NDT451AN-VB |
| LCSC Part # | C693236 |
| Packaging | SOT-223 |
| Customer # | |
| Key Attributes | MOSFET N-CH 30V 7A SOT-223 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | SOT-223 | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 67pF | |
| Current - Continuous Drain(Id) | 7A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 4W | |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF | |
| RDS(on) | 19mΩ@10V;21mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 295pF | |
| Gate Charge(Qg) | 6nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Trench power MOSFET
- 100% Rg and UIS tested
- RoHS compliant
- N-channel MOSFET
In-Stock: 15
15 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.321$ 0.3050 | $ 1.53 |
| 50+ | $ 0.2549$ 0.2422 | $ 12.11 |
| 150+ | $ 0.2265$ 0.2152 | $ 32.28 |
| 500+ | $ 0.1912$ 0.1817 | $ 90.85 |
| 2,500+ | $ 0.1623$ 0.1542 | $ 385.50 |
| 5,000+ | $ 0.1529$ 0.1453 | $ 726.50 |
Standard Packaging2500/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | SOT-223 | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 67pF | |
| Current - Continuous Drain(Id) | 7A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 4W | |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF | |
| RDS(on) | 19mΩ@10V;21mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 295pF | |
| Gate Charge(Qg) | 6nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Trench power MOSFET
- 100% Rg and UIS tested
- RoHS compliant
- N-channel MOSFET
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



