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NCE NCE40P40KRoHS

Manufacturer
NCEAsian Brands
MPN
NCE40P40K
LCSC Part #
C130100
Packaging
TO-252-2L
Customer #
Key Attributes
MOSFET P-CH 40V 40A TO-252-2L
Datasheetpdf iconNCE NCE40P40K
In-Stock: 9,155
9,155 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
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QtyUnit PriceTotal Amount
5+$ 0.5394$ 2.70
50+$ 0.4143$ 20.72
150+$ 0.3623$ 54.35
500+$ 0.2957$ 147.85
2,500+$ 0.2649$ 662.25
5,000+$ 0.247$ 1235.00
Standard Packaging2500/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerNCE
PackagingTO-252-2L
Operating Temperature-55℃~+175℃
Drain to Source Voltage40V
Output Capacitance(Coss)370pF
Current - Continuous Drain(Id)40A
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation80W
Reverse Transfer Capacitance (Crss@Vds)310pF
RDS(on)14mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)2.96nF
Gate Charge(Qg)72nC@10V
TypeP-Channel
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Introduction

AI Translation

NCE40P40K utilizes advanced trench technology and design to deliver excellent on-resistance RDS(ON) at low gate charge. This device is ideally suited for high-current load applications.

Features

AI Translation
  • Drain-source voltage VDS = -40V, drain current ID = -40A
  • On-resistance RDS(ON) < 14 mΩ at gate-source voltage VGS = -10V
  • High-density cell design for ultra-low Rdson
  • Fully characterized avalanche voltage and current
  • High single-pulse avalanche energy EAS with good stability and consistency
  • Excellent package with superior thermal dissipation

Applications

AI Translation
  • Power switch applications
  • Hard switching and high-frequency circuits
  • Uninterruptible power supplies