JSCJ CJ3401
| Manufacturer | JSCJAsian Brands |
| MPN | CJ3401 |
| LCSC Part # | C13799 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET P-CH 30V 4.2A SOT-23 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSCJ | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 115pF | |
| Current - Continuous Drain(Id) | 4.2A | |
| Operating Temperature - | - | |
| Gate Threshold Voltage (Vgs(th)) | 1.3V | |
| Pd - Power Dissipation | 350mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 77pF | |
| RDS(on) | - | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 954pF | |
| Gate Charge(Qg) | - | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 20 |
| Multiple | 20 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
MDT30N10L utilizes advanced trench technology to deliver excellent drain-to-source on-resistance (RDS(ON)) and low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- High dense cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
Applications
AI Translation
- Power switching applications
- Hard switching and high-frequency circuits
- Uninterruptible power supplies
In-Stock: 237,460
237,460 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 20+ | $ 0.0321 | $ 0.64 |
| 200+ | $ 0.0264 | $ 5.28 |
| 600+ | $ 0.0232 | $ 13.92 |
| 3,000+ | $ 0.0213 | $ 63.90 |
| 9,000+ | $ 0.0196 | $ 176.40 |
| 21,000+ | $ 0.0188 | $ 394.80 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSCJ | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 115pF | |
| Current - Continuous Drain(Id) | 4.2A | |
| Operating Temperature - | - | |
| Gate Threshold Voltage (Vgs(th)) | 1.3V | |
| Pd - Power Dissipation | 350mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 77pF | |
| RDS(on) | - | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 954pF | |
| Gate Charge(Qg) | - | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 20 |
| Multiple | 20 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
MDT30N10L utilizes advanced trench technology to deliver excellent drain-to-source on-resistance (RDS(ON)) and low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- High dense cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
Applications
AI Translation
- Power switching applications
- Hard switching and high-frequency circuits
- Uninterruptible power supplies
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



