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HUASHUO HSBA03R0120 product image
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HUASHUO HSBA03R0120RoHS

Manufacturer
HUASHUOAsian Brands
MPN
HSBA03R0120
LCSC Part #
C2987718
Packaging
PRPAK(5x6)
Customer #
Key Attributes
N-Ch and P-Ch, Current: 24A, Voltage: 30V
Datasheetpdf iconHUASHUO HSBA03R0120

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHUASHUO
PackagingPRPAK(5x6)
Configuration-
Drain to Source Voltage30V
Gate Charge(Qg)9.8nC@4.5V
Output Capacitance(Coss)148pF
Current - Continuous Drain(Id)24A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation18W
Reverse Transfer Capacitance (Crss@Vds)115pF
RDS(on)29mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)930pF
TypeN-Channel + P-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

HSBA03R0120 is a high-performance complementary N-channel and P-channel MOSFET with high cell density, delivering excellent on-resistance (R<sub>DS(ON)</sub>) and gate charge for most synchronous buck converter applications. HSBA03R0120 is RoHS and green product compliant, 100% functionally reliability tested to ensure conformance with EAS standards.

Features

AI Translation
  • RoHS compliant green device
  • Ultra-low gate charge
  • Excellent Cdv/dt immunity
  • Advanced high cell density trench technology

Applications

AI Translation
  • Switching applications
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