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Infineon BSC012N06NSRoHS

Manufacturer
Infineon
MPN
BSC012N06NS
LCSC Part #
C6471337
Packaging
TSON-8
Customer #
Key Attributes
MOSFET N-CH 60V 100A TSON-8
Datasheetpdf iconInfineon BSC012N06NS
In-Stock: 939
939 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 5.1168$ 5.12
10+$ 4.5239$ 45.24
30+$ 4.1714$ 125.14
100+$ 3.814$ 381.40
500+$ 3.65$ 1825.00
1,000+$ 3.5753$ 3575.30
Standard Packaging5000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingTSON-8
Operating Temperature-55℃~+175℃
Drain to Source Voltage60V
Current - Continuous Drain(Id)100A
Gate Threshold Voltage (Vgs(th))3.3V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)120pF
RDS(on)1.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)11nF
Gate Charge(Qg)115nC@10V
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Introduction

AI Translation

Power MOS 7° is a new generation of low-loss, high-voltage, N-channel enhancement-mode power MOSFETs. By significantly reducing RDS(ON) and Qg, Power MOS 7° addresses both conduction loss and switching loss. Power MOS 7° combines lower conduction and switching losses with the inherently fast switching speed of Advanced Power Technology's (APT) patented metal gate structure.

Features

AI Translation
  • Optimized for synchronous rectification
  • 100% avalanche tested
  • Superior thermal resistance
  • N-channel
  • 175°C rated
  • Pb-free lead plating; RoHS compliant
  • Halogen-free according to IEC61249-2-21
  • Higher solder joint reliability due to enlarged source interconnection
  • Qualified for industrial applications according to the relevant tests of JEDEC47/20/22