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Infineon IRF7406TRPBF product image
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Infineon IRF7406TRPBFRoHS

Manufacturer
Infineon
MPN
IRF7406TRPBF
LCSC Part #
C169769
Packaging
SOIC-8
Customer #
Key Attributes
30V 5.8A 1V 2.5W 70mΩ@10V 1 P-Channel P-Channel SOIC-8 Single FETs, MOSFETs RoHS
Datasheetpdf iconInfineon IRF7406TRPBF

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingSOIC-8
Gate Charge(Qg)59nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)-
Current - Continuous Drain(Id)5.8A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)70mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)-
TypeP-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging4000
Sales UnitPiece

Introduction

AI Translation

International Rectifier's fifth-generation HEXFET utilizes advanced processing technology to achieve the lowest possible on-resistance per unit silicon area. This advantage, combined with the well-known fast switching speed and robust device design of HEXFET power MOSFETs, provides designers with an extremely efficient device suitable for a wide range of applications. The SO-8 package has been enhanced with a custom lead frame, offering improved thermal characteristics and multi-chip packaging capability, making it ideal for various power supply applications. These improvements enable significant board space reduction when multiple devices are used in an application. The package is compatible with vapor phase, infrared, or wave soldering techniques. In typical PCB-mount applications, power dissipation can exceed 0.8W.

Features

AI Translation
  • 5th generation technology
  • Ultra-low on-resistance
  • Surface mount
  • Available in tape and reel packaging
  • Dynamic dv/dt rating
  • Fast switching
  • Lead-free
Not available now