Infineon IRLR024NTRPBF
| Manufacturer | |
| MPN | IRLR024NTRPBF |
| LCSC Part # | C3007 |
| Packaging | DPAK(TO-252AA) |
| Customer # | |
| Key Attributes | MOSFET N-CH 55V 17A DPAK(TO-252AA) |
| Datasheet |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | DPAK(TO-252AA) | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 17A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 45W | |
| Reverse Transfer Capacitance (Crss@Vds) | 61pF | |
| RDS(on) | 80mΩ@4V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 480pF | |
| Gate Charge(Qg) | 15nC | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | DPAK(TO-252AA) | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 17A | |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 45W | |
| Reverse Transfer Capacitance (Crss@Vds) | 61pF | |
| RDS(on) | 80mΩ@4V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 480pF | |
| Gate Charge(Qg) | 15nC | |
| Type | N-Channel |
Introduction
Fifth Generation HEXFET Power MOSFETs utilize advanced processing techniques to achieve the lowest possible onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
Features
- Advanced Process Technology
- Fast Switching
- Fully Avalanche Rated
- Lead-Free
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.2525 | $ 1.26 |
| 50+ | $ 0.1977 | $ 9.89 |
| 150+ | $ 0.1742 | $ 26.13 |
| 500+ | $ 0.1449 | $ 72.45 |
| 2,000+ | $ 0.1333 | $ 266.60 |
| 4,000+ | $ 0.1255 | $ 502.00 |
Standard Packaging2000/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | DPAK(TO-252AA) | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 17A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 45W | |
| Reverse Transfer Capacitance (Crss@Vds) | 61pF | |
| RDS(on) | 80mΩ@4V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 480pF | |
| Gate Charge(Qg) | 15nC | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | DPAK(TO-252AA) | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 17A | |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 45W | |
| Reverse Transfer Capacitance (Crss@Vds) | 61pF | |
| RDS(on) | 80mΩ@4V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 480pF | |
| Gate Charge(Qg) | 15nC | |
| Type | N-Channel |
Introduction
Fifth Generation HEXFET Power MOSFETs utilize advanced processing techniques to achieve the lowest possible onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
Features
- Advanced Process Technology
- Fast Switching
- Fully Avalanche Rated
- Lead-Free
C3007 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



