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ST STP15810 product image
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ST STP15810RoHS

Manufacturer
ST
MPN
STP15810
LCSC Part #
C126123
Packaging
TO-220
Customer #
Key Attributes
MOSFET N-CH 100V 110A TO-220
Datasheetpdf iconST STP15810

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingTO-220
Gate Charge(Qg)117nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)1.51nF
Current - Continuous Drain(Id)110A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation250W
Reverse Transfer Capacitance (Crss@Vds)67pF
RDS(on)4.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)8.115nF
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

This N-channel Power MOSFETs utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Features

AI Translation
  • 100% avalanche tested
  • Ultra low on-resistance

Applications

AI Translation
  • Switching applications
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