- Pinout Diagram
- Footprint Diagram
ST STP90NF03L
| Manufacturer | |
| MPN | STP90NF03L |
| LCSC Part # | C60612 |
| Packaging | TO-220 |
| Customer # | |
| Key Attributes | MOSFET N-CH 30V 90A TO-220 |
| Datasheet |  ST STP90NF03L |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220 | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 860pF | |
| Current - Continuous Drain(Id) | 90A | |
| Operating Temperature - | -65℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 150W | |
| Reverse Transfer Capacitance (Crss@Vds) | 170pF | |
| RDS(on) | 5.6mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.7nF | |
| Gate Charge(Qg) | 47nC@5V | |
| Vgs | ±20V |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
This application specific Power Mosfet is the third generation of unique “Single Feature Size™” strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance.
Features
- Optimal RDS(on)×Qg trade-off
- Conduction losses reduced
- Switching losses reduced
Applications
- Switching application
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.1026 | $ 1.10 |
| 10+ | $ 0.9287 | $ 9.29 |
| 50+ | $ 0.8338 | $ 41.69 |
| 100+ | $ 0.7259 | $ 72.59 |
| 500+ | $ 0.6777 | $ 338.85 |
| 1,000+ | $ 0.6567 | $ 656.70 |
Standard Packaging50/Full Tube | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220 | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 860pF | |
| Current - Continuous Drain(Id) | 90A | |
| Operating Temperature - | -65℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 150W | |
| Reverse Transfer Capacitance (Crss@Vds) | 170pF | |
| RDS(on) | 5.6mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.7nF | |
| Gate Charge(Qg) | 47nC@5V | |
| Vgs | ±20V |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
This application specific Power Mosfet is the third generation of unique “Single Feature Size™” strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance.
Features
- Optimal RDS(on)×Qg trade-off
- Conduction losses reduced
- Switching losses reduced
Applications
- Switching application
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |