UMW RFD12N06RLESM9A(UMW)
| Manufacturer | UMWAsian Brands |
| MPN | RFD12N06RLESM9A(UMW) |
| LCSC Part # | C7499401 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | MOSFET 60V 18A TO-252 |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | UMW | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+175℃ | |
| Current - Continuous Drain(Id) | 18A | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Pd - Power Dissipation | 49W | |
| RDS(on) | 52mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 28pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 485pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | UMW | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+175℃ | |
| Current - Continuous Drain(Id) | 18A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Pd - Power Dissipation | 49W | |
| RDS(on) | 52mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 28pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 485pF |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Drain-Source Voltage (V) = 60V
- On-Resistance < 63mΩ (V<sub>GS</sub> = 10V)
- On-Resistance < 71mΩ (V<sub>GS</sub> = 5V)
- Ultra-Low On-Resistance
- Peak Current vs. Pulse Width Curve
- UIS Rating Curve
- Switching Time vs. Gate Resistance Curve
In-Stock: 1,840
1,840 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.1535 | $ 0.77 |
| 50+ | $ 0.1206 | $ 6.03 |
| 150+ | $ 0.1065 | $ 15.98 |
| 500+ | $ 0.089 | $ 44.50 |
| 2,500+ | $ 0.0811 | $ 202.75 |
| 5,000+ | $ 0.0764 | $ 382.00 |
Standard Packaging2500/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | UMW | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+175℃ | |
| Current - Continuous Drain(Id) | 18A | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Pd - Power Dissipation | 49W | |
| RDS(on) | 52mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 28pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 485pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | UMW | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+175℃ | |
| Current - Continuous Drain(Id) | 18A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Pd - Power Dissipation | 49W | |
| RDS(on) | 52mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 28pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 485pF |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Drain-Source Voltage (V) = 60V
- On-Resistance < 63mΩ (V<sub>GS</sub> = 10V)
- On-Resistance < 71mΩ (V<sub>GS</sub> = 5V)
- Ultra-Low On-Resistance
- Peak Current vs. Pulse Width Curve
- UIS Rating Curve
- Switching Time vs. Gate Resistance Curve
C7499401 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
