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VISHAY IRFD110PBF product image
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VISHAY IRFD110PBFRoHS

Manufacturer
VISHAY
MPN
IRFD110PBF
LCSC Part #
C3005
Packaging
HVMDIP-4
Customer #
Key Attributes
100V 1A 4V 1.3W 540mΩ@10V 1 N-channel N-Channel HVMDIP-4 Single FETs, MOSFETs RoHS
Datasheetpdf iconVISHAY IRFD110PBF

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerVISHAY
PackagingHVMDIP-4
Drain to Source Voltage100V
Output Capacitance(Coss)81pF
Current - Continuous Drain(Id)1A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation1.3W
Reverse Transfer Capacitance (Crss@Vds)15pF
RDS(on)540mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)180pF
Gate Charge(Qg)8.3nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging100
Sales UnitPiece

Introduction

AI Translation

The third generation Power MOSFETs provide the designer with an outstanding combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4-lead DIP package is a low cost, machine insertable package style that allows various combinations of stacking on standard 0.1 inch pin spacing. The dual drain provides a thermal connection to the mounting surface with up to 1 W power dissipation.

Features

AI Translation
  • Dynamic dV/dt rated
  • Repetitive avalanche rated
  • Suitable for automatic insertion
  • End-stackable
  • Operating temperature up to 175 °C
  • Fast switching and easy to parallel
  • Compliant with RoHS directive 2002/95/EC
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