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onsemi FDM3622RoHS

Manufacturer
onsemi
MPN
FDM3622
LCSC Part #
C890886
Packaging
WDFN-8(3.3x3.3)
Customer #
Key Attributes
MOSFET N-CH 100V 4.4A WDFN-8(3.3x3.3)
Datasheetpdf icononsemi FDM3622

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingWDFN-8(3.3x3.3)
Drain to Source Voltage100V
Current - Continuous Drain(Id)4.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation2.1W
Reverse Transfer Capacitance (Crss@Vds)55pF
RDS(on)60mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.09nF
Gate Charge(Qg)17nC@10V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Features

AI Translation
  • Max rDS(on)=60mΩ at VGS=10Vs , ΔD=4.4A
  • Max rDS(on)=80mΩ at VGS=6.0V , ΔlD=3.8A
  • Low Miller Charge
  • Low QRR Body Diode
  • Optimized efficiency at high frequencies
  • UIS Capability (Single Pulse and Repetitive Pulse)

Applications

AI Translation
  • Distributed Power Architectures and VRMs
  • Primary Switch for 24V and 48V Systems
  • High Voltage Synchronous Rectifier
  • Formerly developmental type 82744
  • MLP 3.3x3.3
In-Stock: 3
3 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 1.476$ 1.48
10+$ 1.2169$ 12.17
30+$ 1.0736$ 32.21
100+$ 0.9127$ 91.27
500+$ 0.8418$ 420.90
1,000+$ 0.8096$ 809.60
Standard Packaging3000/Full Reel
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