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TI UCC27211AQDDARQ1RoHS

Manufacturer
MPN
UCC27211AQDDARQ1
LCSC Part #
C485921
Packaging
SO-8
Customer #
Key Attributes
120-V Boot, 4-A Peak, High-Frequency High-Side and Low-Side Driver
Datasheetpdf iconTI UCC27211AQDDARQ1
In-Stock: 1,253
1,253 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 1.3316$ 1.33
10+$ 1.1222$ 11.22
30+$ 1.0069$ 30.21
100+$ 0.8705$ 87.05
500+$ 0.8136$ 406.80
1,000+$ 0.7876$ 787.60
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryIntegrated Circuits (ICs)/Power Management (PMIC)/Gate Drivers
ManufacturerTI
PackagingSO-8
Input Logic Level - Low1.2V~1.9V
Low Level Delay Time20ns
High Level Delay Time16ns
Quiescent Current170uA
Input Logic Level - High1.7V~2.55V
Operating Temperature-40℃~+140℃
Voltage - Supply8V~17V
Driven ConfigurationHalf-Bridge
Current - Output Low(IOL)4A
Rise Time7.2ns
Fall Time5.5ns
FeaturesUnder Voltage Protection;Built-in bootstrap diode
Current - Output High(IOH)4A
Load TypeMOSFET

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

The UCC27211A-Q1 device driver is based on the popular UCC27201 MOSFET drivers; but, this device offers several significant performance improvements. The peak output pullup and pulldown current has been increased to 4-A source and 4-A sink, and pullup and pulldown resistance have been reduced to 0.9Ω, and thereby allows for driving large power MOSFETs with minimized switching losses during the transition through the Miller Plateau of the MOSFET. The input structure can directly handle -10VDC, which increases robustness and also allows direct interface to gate-drive transformers without using rectification diodes. The inputs are also independent of supply voltage and have a 20-V maximum rating. The switching node of the UCC27211A-Q1 (HS pin) can handle -18-V maximum, which allows the high-side channel to be protected from inherent negative voltages caused by parasitic inductance and stray capacitance. The UCC27211A-Q1 has increased hysteresis that allows for interface to analog or digital PWM controllers with enhanced noise immunity. The low-side and high-side gate drivers are independently controlled and matched to 2 ns between the turn on and turn off of each other. An on-chip 120-V rated bootstrap diode eliminates the external discrete diodes. Undervoltage lockout is provided for both the high-side and the low-side drivers which provides symmetric turn on and turn off behavior and forces the outputs low if the drive voltage is below the specified threshold. The UCC27211A-Q1 device is offered in an 8-Pin SO-PowerPAD package.

Features

AI Translation
  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results:
  • Device Temperature Grade -40°C to +140°C Ambient Operating Temperature Range
  • Device HBM Classification Level 2
  • Device CDM Classification Level C6
  • Drives Two N-Channel MOSFETs in High-Side and Low-Side Configuration With Independent Inputs
  • Maximum Boot Voltage 120-V DC
  • 4-A Sink, 4-A Source Output Currents
  • 0.9-Ω Pullup and Pulldown Resistance
  • Input Pins Can tolerate -10V to +20V and are Independent of Supply Voltage Range
  • TTL Compatible Inputs
  • 8-V to 17-V VDD Operating Range, (20-V ABS MAX)
  • 7.2-ns Rise and 5.5-ns Fall Time With 1000-pF Load
  • Fast Propagation Delay Times (20-ns typical)
  • 4-ns Delay Matching
  • Symmetrical Undervoltage Lockout for High-Side and Low-Side Driver
  • Available in the Industry Standard SO-PowerPAD SOIC-8 Package
  • Specified from -40 to +140°C

Applications

AI Translation
  • Power Supplies for Telecom, Datacom, and Merchant
  • Half-Bridge and Full-Bridge Converters
  • Push-Pull Converters
  • High Voltage Synchronous-Buck Converters
  • Two-Switch Forward Converters
  • Active-Clamp Forward Converters
  • Class-D Audio Amplifiers