onsemi FCPF190N60E
| Manufacturer | |
| MPN | FCPF190N60E |
| LCSC Part # | C350834 |
| Packaging | TO-220F-3 |
| Customer # | |
| Key Attributes | 600V 20.6A 3.5V 39W 190mΩ@10V 1 N-channel N-Channel TO-220F-3 Single FETs, MOSFETs RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-220F-3 | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 2.396nF | |
| Current - Continuous Drain(Id) | 20.6A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Pd - Power Dissipation | 39W | |
| Reverse Transfer Capacitance (Crss@Vds) | 165pF | |
| RDS(on) | 190mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.175nF | |
| Gate Charge(Qg) | 82nC@10V | |
| Type | N-Channel |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
SuperFET II MOSFET is a new high-voltage super junction (SJ) MOSFET series utilizing charge balance technology, featuring excellent low on-resistance and low gate charge performance. This technology is designed to minimize conduction losses while delivering superior switching performance, dv/dt rates, and higher avalanche energy. As a result, the SuperFET II Easy Drive MOSFET series exhibits slightly slower rise and fall times compared to the SuperFET II MOSFET series. Products in this series carry the suffix "E" in their part numbers, helping to address EMI concerns and simplify design implementation. For applications requiring fast switching where switching losses must be minimized, consider the SuperFET II MOSFET series.
Features
- 650 V @ TJ = 150°C
- Typical RDS(on) = 160 mΩ
- Ultra-low gate charge (typical Qg = 63 nC)
- Low effective output capacitance (typical Coss(eff.) = 178 pF)
- 100% avalanche tested
- Integrated gate resistor
- RoHS compliant
Applications
- LCD / LED / PDP TV lighting
- Solar inverters
- AC-DC power supplies
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 3.2037 | $ 3.20 |
| 10+ | $ 2.7407 | $ 27.41 |
| 50+ | $ 2.4664 | $ 123.32 |
| 100+ | $ 2.1889 | $ 218.89 |
| 500+ | $ 2.0602 | $ 1030.10 |
| 1,000+ | $ 2.0019 | $ 2001.90 |
Standard Packaging50/Full Tube | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-220F-3 | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 2.396nF | |
| Current - Continuous Drain(Id) | 20.6A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Pd - Power Dissipation | 39W | |
| Reverse Transfer Capacitance (Crss@Vds) | 165pF | |
| RDS(on) | 190mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.175nF | |
| Gate Charge(Qg) | 82nC@10V | |
| Type | N-Channel |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
SuperFET II MOSFET is a new high-voltage super junction (SJ) MOSFET series utilizing charge balance technology, featuring excellent low on-resistance and low gate charge performance. This technology is designed to minimize conduction losses while delivering superior switching performance, dv/dt rates, and higher avalanche energy. As a result, the SuperFET II Easy Drive MOSFET series exhibits slightly slower rise and fall times compared to the SuperFET II MOSFET series. Products in this series carry the suffix "E" in their part numbers, helping to address EMI concerns and simplify design implementation. For applications requiring fast switching where switching losses must be minimized, consider the SuperFET II MOSFET series.
Features
- 650 V @ TJ = 150°C
- Typical RDS(on) = 160 mΩ
- Ultra-low gate charge (typical Qg = 63 nC)
- Low effective output capacitance (typical Coss(eff.) = 178 pF)
- 100% avalanche tested
- Integrated gate resistor
- RoHS compliant
Applications
- LCD / LED / PDP TV lighting
- Solar inverters
- AC-DC power supplies
C350834 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



