onsemi MJ11033G
| Manufacturer | |
| MPN | MJ11033G |
| LCSC Part # | C362058 |
| Packaging | TO-204(TO-3) |
| Customer # | |
| Key Attributes | 120V 1000 PNP 50A TO-204(TO-3) Single Bipolar Transistors RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | onsemi | |
| Packaging | TO-204(TO-3) | |
| Vbe Saturation(VBE(sat)) | 4.5V | |
| Current - Collector Cutoff | - | |
| Collector - Emitter Voltage VCEO | 120V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 1000 | |
| Pd - Power Dissipation | 300W | |
| type | PNP | |
| Current - Collector(Ic) | 50A | |
| Operating Temperature | -55℃~+200℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 3.5V |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 100 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
High-current complementary silicon power transistors for use as output devices in complementary general-purpose amplifier applications.
Features
AI Translation
- High DC current gain — h_FE min. 1000 at I_C = 25 A DC
- h_FE min. 400 at I_C = 50 A DC
- Characterized to 100 A (pulsed)
- Diode protection to rated I_C
- Monolithic construction with built-in base-emitter shunt resistor
- Junction temperature up to +200°C
- Available in lead-free package
In-Stock: 500
500 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 13.0915 | $ 13.09 |
| 10+ | $ 11.2595 | $ 112.60 |
| 30+ | $ 9.2799 | $ 278.40 |
| 100+ | $ 8.3436 | $ 834.36 |
Standard Packaging100/Full Tray | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | onsemi | |
| Packaging | TO-204(TO-3) | |
| Vbe Saturation(VBE(sat)) | 4.5V | |
| Current - Collector Cutoff | - | |
| Collector - Emitter Voltage VCEO | 120V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 1000 | |
| Pd - Power Dissipation | 300W | |
| type | PNP | |
| Current - Collector(Ic) | 50A | |
| Operating Temperature | -55℃~+200℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 3.5V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 100 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
High-current complementary silicon power transistors for use as output devices in complementary general-purpose amplifier applications.
Features
AI Translation
- High DC current gain — h_FE min. 1000 at I_C = 25 A DC
- h_FE min. 400 at I_C = 50 A DC
- Characterized to 100 A (pulsed)
- Diode protection to rated I_C
- Monolithic construction with built-in base-emitter shunt resistor
- Junction temperature up to +200°C
- Available in lead-free package
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Type | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |



