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onsemi CAV93C76VE-GT3 product image
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onsemi CAV93C76VE-GT3RoHS

Manufacturer
MPN
CAV93C76VE-GT3
LCSC Part #
C605361
Packaging
SOIC-8
Customer #
Key Attributes
8Kbit 2.5V~5.5V 2MHz SPI SOIC-8 Memory (ICs) RoHS
Datasheetpdf icononsemi CAV93C76VE-GT3
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QtyUnit Price(Reference Only)Total Amount
1+$ 0.5512$ 0.55
200+$ 0.214$ 42.80
500+$ 0.2059$ 102.95
1,000+$ 0.2027$ 202.70
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory (ICs)
Manufactureronsemi
PackagingSOIC-8
Memory Size8Kbit
Voltage - Supply2.5V~5.5V
Operating temperature-40℃~+125℃
Clock Frequency2MHz
FeaturesSoftware write protection function;Built-in power-on reset (POR)
Data Retention - TDR (Year)100 Years
Write Cycle Time(tWC)5ms
Write Cycle Endurance1,000,000 cycles
InterfaceSPI

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

The CAV93C76 is an EEPROM Serial 8−Kb Microwire Automotive Grade 1 device, which is configured as either registers of 16 bits (ORG pin at VCC or Not Connected) or 8 bits (ORG pin at GND). Each register can be written (or read) serially by using the DI (or DO) pin. The CAV93C76 is manufactured using ON Semiconductor’s advanced CMOS EEPROM floating gate technology. The device is designed to endure 1,000,000 program/erase cycles and has a data retention of 100 years. The device is available in 8−pin SOIC and TSSOP packages.

Features

AI Translation
  • Automotive AEC−Q100 Grade 1 (-40℃ to +125℃ Qualified
  • High Speed Operation: 2 MHz
  • 2.5 V to 5.5 V Supply Voltage Range
  • Selectable x8 or x16 Memory Organization
  • Self−timed Write Cycle with Auto−clear
  • Software Write Protection
  • Power−up Inadvertant Write Protection
  • Low Power CMOS Technology
  • 1,000,000 Program/Erase Cycles
  • 100 Year Data Retention
  • Sequential Read
  • 8−pin SOIC and TSSOP Packages
  • This Device is Pb−Free, Halogen Free/BFR Free and RoHS Compliant