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Infineon BGA 729N6 E6327 product image
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Infineon BGA 729N6 E6327RoHS

Manufacturer
MPN
BGA 729N6 E6327
LCSC Part #
C534169
Packaging
TSNP-6
Customer #
Key Attributes
1.5V~3.3V 16.3dB 70MHz~1GHz 15dB 6dBm 6.3mA TSNP-6 RF Amplifiers RoHS
Datasheetpdf iconInfineon BGA 729N6 E6327
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1+$ 0.7103$ 0.71
200+$ 0.2759$ 55.18
500+$ 0.2664$ 133.20
1,000+$ 0.2617$ 261.70
Standard Packaging15000/Full Reel
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Products Specifications

All
TypeDescription
CategoryRF and Wireless/RF Amplifiers
ManufacturerInfineon
PackagingTSNP-6
Voltage - Supply1.5V~3.3V
Input Return Loss15dB
Operating Temperature-40℃~+85℃
Gain16.3dB
Frequency Range70MHz~1GHz
Noise Figure15dB
Output Return Loss17dB
FeaturesVariable gain control;Low-power mode;Electrostatic protection
IP320dBm
P1dB6dBm
Current - Supply6.3mA

Introduction

AI Translation

The BGA729N6 is a broadband low power low noise amplifier (LNA) MMIC for portable and mobile TV applications which covers a wide frequency range from 70 MHz to 1000 MHz. The LNA provides 16.3 dB gain and 1.05 dB noise figure at a current consumption of 6.3 mA in the application configuration described in Chapter 3. In bypass mode the LNA provides an insertion loss of 4.2 dB. The bypass mode with much higher linearity

Features

AI Translation
  • Insertion power gain: 16.3 dB
  • Insertion Loss in bypass mode: 4.2 dB
  • Low noise figure: 1.05 dB / 4.3 dB in high gain / bypass mode
  • Low current consumption: 6.3 mA
  • Power off function
  • Operating frequency: 70 - 1000 MHz
  • Three-state control: OFF-, bypass- and high gain-Mode
  • Supply voltage: 1.5 V to 3.3 V
  • Ultra small TSNP-6-2 leadless package (footprint: 0.7×1.1 mm²)
  • B7HF Silicon Germanium technology
  • No external matching inductor required
  • RF input and output internally matched to 50 Ω
  • Only 2 external SMD component necessary
  • 2 kV HBM ESD protection (including AI-pin)
  • Pb-free (RoHS compliant) package