IGBT Transistors / Modules
The Results of IGBT Transistors / Modules
4572
Manufacturer
Package
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
Operating Temperature
Power Dissipation (Pd)
Diode Forward Voltage (Vf@If)
Diode Reverse Recovery Time (Trr)
Turn?off Delay Time (Td(off))
Turn?off Switching Loss (Eoff)
Collector-Emitter Breakdown Voltage (Vces)
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge)
Type
Turn?on Delay Time (Td(on))
Total Gate Charge (Qg@Ic,Vge)
Collector Current (Ic)
Input Capacitance (Cies@Vce)
Turn?on Switching Loss (Eon)
Results:
4572
Images
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Pricing
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Quantity
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Availability
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Mfr.Part #
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Manufacturer
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Description
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RoHS
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LCSC Part#
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Package
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Packaging
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Turn?off Delay Time (Td(off))
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Power Dissipation (Pd)
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Turn?on Delay Time (Td(on))
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Operating Temperature
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Collector Current (Ic)
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Collector-Emitter Breakdown Voltage (Vces)
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Input Capacitance (Cies@Vce)
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Type
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Gate-Emitter Threshold Voltage (Vge(th)@Ic)
|
Total Gate Charge (Qg@Ic,Vge)
|
Turn?off Switching Loss (Eoff)
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Turn?on Switching Loss (Eon)
|
Diode Reverse Recovery Time (Trr)
|
|---|
Images
|
Pricing
|
Quantity
|
Availability
|
Mfr.Part #
|
Manufacturer
|
Description
|
RoHS
|
LCSC Part#
|
Package
|
Packaging
|
Turn?off Delay Time (Td(off))
|
Power Dissipation (Pd)
|
Turn?on Delay Time (Td(on))
|
Operating Temperature
|
Collector Current (Ic)
|
Collector-Emitter Breakdown Voltage (Vces)
|
Input Capacitance (Cies@Vce)
|
Type
|
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
|
Total Gate Charge (Qg@Ic,Vge)
|
Turn?off Switching Loss (Eoff)
|
Turn?on Switching Loss (Eon)
|
Diode Reverse Recovery Time (Trr)
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| | Min: 1 Mult: 1
Full Reel: 400
| 0 | IXGT32N170-TRL | Littelfuse/IXYS | 350W 75A 1.7kV NPT (non-penetrating type) TO-268AA IGBT Transistors / Modules ROHS | C3194061 | TO-268AA | Tape & Reel (TR) | 270ns | 350W | 45ns | -55℃~+150℃@(Tj) | 75A | 1.7kV | - | NPT (non-penetrating type) | 3.3V@15V,32A | 155nC | 11mJ | - | - | ||
| | Min: 1 Mult: 1 | 0 | FF300R17ME4 | Infineon Technologies | 1.8kW 375A 1.7kV NPT (non-penetrating type) IGBT Transistors / Modules ROHS | C3198687 | - | Bag-packed | - | 1.8kW | - | -40℃~+150℃@(Tj) | 375A | 1.7kV | - | NPT (non-penetrating type) | 2.3V@15V,300A | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0  | FS225R12OE4 | Infineon Technologies | 1.25kW 350A 1.2kV FS(Field Stop) IGBT Transistors / Modules ROHS | C3198782 | - | Tray | - | 1.25kW | - | -40℃~+125℃ | 350A | 1.2kV | 13nF@25V | FS(Field Stop) | 2.15V@15V,225A | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FF600R12KE4PBOSA1 | Infineon Technologies | 600A 1.2kV FS(Field Stop) IGBT Transistors / Modules ROHS | C3190213 | - | Tray | - | - | - | -40℃~+150℃@(Tj) | 600A | 1.2kV | 38nF@25V | FS(Field Stop) | 2.2V@15V,600A | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FP15R12W1T7PB11BPSA1 | Infineon Technologies | 20mW 15A 1.2kV FS(Field Stop) IGBT Transistors / Modules ROHS | C3190218 | - | Tray | - | 20mW | - | -40℃~+175℃@(Tj) | 15A | 1.2kV | 2.82nF@25V | FS(Field Stop) | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | F3L400R10W3S7FB11 | Infineon Technologies | 20mW 220A 950V FS(Field Stop) IGBT Transistors / Modules ROHS | C3190253 | - | Tray | - | 20mW | - | -40℃~+150℃@(Tj) | 220A | 950V | 49.2nF@25V | FS(Field Stop) | 2V@15V,150A | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FF225R17ME4B11 | Infineon Technologies | 1.5kW 340A 1.7kV FS(Field Stop) IGBT Transistors / Modules ROHS | C3190348 | - | Tray | - | 1.5kW | - | -40℃~+150℃@(Tj) | 340A | 1.7kV | 18.5nF@25V | FS(Field Stop) | 2.3V@15V,225A | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | IRG4BC40W-STRRP | Infineon Technologies | 160W 40A 600V D2PAK IGBT Transistors / Modules ROHS | C3190483 | D2PAK | Tube-packed | - | 160W | - | -55℃~+150℃@(Tj) | 40A | 600V | - | - | - | - | 0.23mJ | 0.11mJ | - | ||
| | Min: 1 Mult: 1 | 0 | IRGS4620DPBF | Infineon Technologies | 140W 32A 600V D2PAK IGBT Transistors / Modules ROHS | C3190513 | D2PAK | Tube-packed | 83ns | 140W | 31ns | -40℃~+175℃@(Tj) | 32A | 600V | - | - | 1.85V@15V,12A | 25nC | 0.225mJ | 0.075mJ | 68ns | ||
| | Min: 1 Mult: 1
Full Reel: 800
| 0 | FGB40N6S2T | onsemi | 290W 75A 600V D2PAK(TO-263) IGBT Transistors / Modules ROHS | C3190543 | D2PAK(TO-263) | Tape & Reel (TR) | 35ns | 290W | 8ns | -55℃~+150℃@(Tj) | 75A | 600V | - | - | 2.7V@15V,20A | 35nC | 0.195mJ | 0.115mJ | - | ||
| | Min: 1 Mult: 1
Full Reel: 1000
| 0 | STGB20H65DFB2 | STMicroelectronics | 147W 40A 650V FS(Field Stop) D2PAK-3 IGBT Transistors / Modules ROHS | C3190548 | D2PAK-3 | Tape & Reel (TR) | 78.8ns | 147W | 16ns | -55℃~+175℃@(Tj) | 40A | 650V | - | FS(Field Stop) | 2.1V@15V,20A | 56nC | 0.214mJ | 0.265mJ | 215ns | ||
| | Min: 1 Mult: 1
Full Reel: 2000
| 0 | IRGR4045DTRPBF | Infineon Technologies | 77W 12A 600V DPAK IGBT Transistors / Modules ROHS | C3190803 | DPAK | Tape & Reel (TR) | 75ns | 77W | 27ns | -55℃~+175℃@(Tj) | 12A | 600V | - | - | 2V@15V,6A | 19.5nC | 0.122mJ | 0.056mJ | 74ns | ||
| | Min: 1 Mult: 1 | 0 | IRGR4045DPBF | Infineon Technologies | 77W 12A 600V DPAK IGBT Transistors / Modules ROHS | C3190808 | DPAK | Bag-packed | 75ns | 77W | 27ns | -55℃~+175℃@(Tj) | 12A | 600V | - | - | 2V@15V,6A | 19.5nC | 0.122mJ | 0.056mJ | 74ns | ||
| | Min: 1 Mult: 1 | 0 | IGP03N120H2 | Infineon Technologies | TO-220-3 IGBT Transistors / Modules ROHS | C3191638 | TO-220-3 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | SGW20N60HS | Infineon Technologies | 178W 36A 600V NPT (non-penetrating type) TO-247-3-1 IGBT Transistors / Modules ROHS | C3191723 | TO-247-3-1 | Tube-packed | - | 178W | - | -55℃~+150℃@(Tj) | 36A | 600V | - | NPT (non-penetrating type) | - | - | - | 0.69mJ | - | ||
| | Min: 1 Mult: 1 | 0 | IKZA75N65SS5XKSA1 | Infineon Technologies | 395W 80A 650V FS(Field Stop) TO-247-4 IGBT Transistors / Modules ROHS | C3191748 | TO-247-4 | Tube-packed | 145ns | 395W | 22ns | -40℃~+175℃@(Tj) | 80A | 650V | - | FS(Field Stop) | 1.7V@15V,75A | 164nC | 0.75mJ | 0.24mJ | - | ||
| | Min: 1 Mult: 1
Full Reel: 3000
| 0 | IKD06N65ET6ARMA1 | Infineon Technologies | 31W 9A 650V FS(Field Stop) TO-252-3 IGBT Transistors / Modules ROHS | C3191758 | TO-252-3 | Tape & Reel (TR) | 35ns | 31W | 15ns | -40℃~+175℃@(Tj) | 9A | 650V | - | FS(Field Stop) | 1.9V@15V,3A | 13.7nC | 0.03mJ | 0.06mJ | 30ns | ||
| | Min: 1 Mult: 1
Full Reel: 3000
| 0 | IGD15N65T6ARMA1 | Infineon Technologies | 100W 30A 650V FS(Field Stop) TO-252-3 IGBT Transistors / Modules ROHS | C3191768 | TO-252-3 | Tape & Reel (TR) | 117ns | 100W | 30ns | -40℃~+175℃@(Tj) | 30A | 650V | - | FS(Field Stop) | 1.9V@15V,11.5A | 37nC | 0.11mJ | 0.23mJ | - | ||
| | Min: 1 Mult: 1 | 0 | IKW75N60TA | Infineon Technologies | TO-247-3 IGBT Transistors / Modules ROHS | C3171007 | TO-247-3 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | F3L200R07W2S5B11 | Infineon Technologies | IGBT Transistors / Modules ROHS | C3171107 | - | Tray | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FF225R17ME4P | Infineon Technologies | IGBT Transistors / Modules ROHS | C3171387 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FS50R06KE3 | Infineon Technologies | 190W 70A 600V FS(Field Stop) IGBT Transistors / Modules ROHS | C3190301 | - | Tray | - | 190W | - | -40℃~+150℃@(Tj) | 70A | 600V | 3.1nF@25V | FS(Field Stop) | 1.9V@15V,50A | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FS300R12OE4B81BPSA1 | Infineon Technologies | 20mW 300A 1.2kV FS(Field Stop) IGBT Transistors / Modules ROHS | C3190366 | - | Tray | - | 20mW | - | -40℃~+150℃@(Tj) | 300A | 1.2kV | 18.5nF@25V | FS(Field Stop) | 2.1V@15V,300A | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FZ2000R33HE4 | Infineon Technologies | 4.2mW 2kA 3.3kV FS(Field Stop) IGBT Transistors / Modules ROHS | C3190391 | - | Tray | - | 4.2mW | - | -40℃~+150℃@(Tj) | 2kA | 3.3kV | 280nF@25V | FS(Field Stop) | 2.2V@15V,2kA(Typ) | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | IRGS4607DPBF | Infineon Technologies | 58W 11A 600V D2PAK IGBT Transistors / Modules ROHS | C3190476 | D2PAK | Tube-packed | 120ns | 58W | 27ns | -40℃~+175℃@(Tj) | 11A | 600V | - | - | 2.05V@15V,4A | 9nC | 0.062mJ | 0.14mJ | 48ns |